CAJ | 학술논문

从工程应用的角度介绍了一种基于总剂量效应的SOI器件模型参数的快速提取方法。首先，提取0 krad（Si）时器件的模型参数，然后针对总剂量敏感参数，对100 krad（Si）总辐射试验后的同种器件进行模型参数优化，并对得到的模型参数进行验证。结果表明，该方法所提取的模型参数准确有效，解决了国内目前在抗辐照SOI工艺中因采用标准SOI工艺SPICE模型（如BSIMSOI等）导致不能反映辐照效应对器件特性的影响且无法给出经过不同辐照剂量之后的器件特性的缺点，可用于评估辐射对SOI电路的影响。
종공정응용적각도개소료일충기우총제량효응적SOI기건모형삼수적쾌속제취방법。수선，제취0 krad（Si）시기건적모형삼수，연후침대총제량민감삼수，대100 krad（Si）총복사시험후적동충기건진행모형삼수우화，병대득도적모형삼수진행험증。결과표명，해방법소제취적모형삼수준학유효，해결료국내목전재항복조SOI공예중인채용표준SOI공예SPICE모형（여BSIMSOI등）도치불능반영복조효응대기건특성적영향차무법급출경과불동복조제량지후적기건특성적결점，가용우평고복사대SOI전로적영향。
Introduced a simple extraction method of the SOI device model parameter, which is based on the total ionizing dose radiation effect(TID). Firstly, extracted the device model parameters before the radiation. After that, the model parameters, which are sensitive to the TID, were optimized for the same device after 100 krad(Si)radiation. Finally, we veriifed the optimized model parameters. The result indicated that the method could be exactly and effectively extracted the model parameters to assess the inlfuence of the total ionizing dose radiation effect on the SOI circuit.