电子元件与材料
電子元件與材料
전자원건여재료
ELECTRONIC COMPONENTS & MATERIALS
2015年
6期
87-89
,共3页
CMOS%功率放大器%片上变压器%匹配%无源器件%电磁仿真
CMOS%功率放大器%片上變壓器%匹配%無源器件%電磁倣真
CMOS%공솔방대기%편상변압기%필배%무원기건%전자방진
CMOS%power amplifier%on-chip transformer%match%passives device%electromagnetic simulation
设计了一个2 GHz全集成的CMOS功率放大器(PA),该PA的匹配网络采用片上变压器实现,片上变压器用来实现单端信号和差分信号之间的转换和输入、输出端的阻抗匹配。采用ADS Momentum软件对片上变压器进行电磁仿真,在2 GHz频点,输入、级间和输出变压器的功率传输效率分别为74.2%,75.5%和78.4%。该PA基于TSMC 65 nm CMOS模型设计,采用Agilent ADS软件进行电路仿真,仿真结果表明:在2.5 V供电电压、2 GHz工作频率点,PA的输入、输出完全匹配到50?(S11=–22.4 dB、S22=–13.5 dB),功率增益为33.2 dB,最高输出功率达到23.4 dBm,最高功率附加效率(PAE)达到35.3%,芯片面积仅为1.01 mm2。
設計瞭一箇2 GHz全集成的CMOS功率放大器(PA),該PA的匹配網絡採用片上變壓器實現,片上變壓器用來實現單耑信號和差分信號之間的轉換和輸入、輸齣耑的阻抗匹配。採用ADS Momentum軟件對片上變壓器進行電磁倣真,在2 GHz頻點,輸入、級間和輸齣變壓器的功率傳輸效率分彆為74.2%,75.5%和78.4%。該PA基于TSMC 65 nm CMOS模型設計,採用Agilent ADS軟件進行電路倣真,倣真結果錶明:在2.5 V供電電壓、2 GHz工作頻率點,PA的輸入、輸齣完全匹配到50?(S11=–22.4 dB、S22=–13.5 dB),功率增益為33.2 dB,最高輸齣功率達到23.4 dBm,最高功率附加效率(PAE)達到35.3%,芯片麵積僅為1.01 mm2。
설계료일개2 GHz전집성적CMOS공솔방대기(PA),해PA적필배망락채용편상변압기실현,편상변압기용래실현단단신호화차분신호지간적전환화수입、수출단적조항필배。채용ADS Momentum연건대편상변압기진행전자방진,재2 GHz빈점,수입、급간화수출변압기적공솔전수효솔분별위74.2%,75.5%화78.4%。해PA기우TSMC 65 nm CMOS모형설계,채용Agilent ADS연건진행전로방진,방진결과표명:재2.5 V공전전압、2 GHz공작빈솔점,PA적수입、수출완전필배도50?(S11=–22.4 dB、S22=–13.5 dB),공솔증익위33.2 dB,최고수출공솔체도23.4 dBm,최고공솔부가효솔(PAE)체도35.3%,심편면적부위1.01 mm2。
A fully integrated CMOS power amplifier (PA) operating at 2 GHz was designed, with on-chip transformers-based match networks used to realize the conversion of single-end between differential signals and the impedance match of input and output port. On-chip transformer was simulated using electromagnetic simulator ADS Momentum, and the efficiencies of input match, inter-stage and output match networks were 74.2%, 75.5% and 78.4%, respectively. The PA was designed and simulated in Agilent’s ADS using TSMC 65 nm CMOS spice model. According to the simulation results of PA operating at 2 GHz and supplied 2.5 V, input and output impedances are fully matched to 50?(S11 = –22.4 dB,S22= –13.5 dB), power gain is 33.2 dB, the saturated output power is 23.4 dBm, the maximum PAE is 35.3%, and the chip’s area is only 1.01 mm2.