CAJ | 학술논문

通过改进已提出的时域传输线模型（ TLM）与漂移－扩散模型（ DDM）相结合的TLM－DDM耦合数值计算模型中网格单元结构，用于计算带晶体管负载电缆的电磁脉冲响应问题，该模型考虑了电磁脉冲响应经过电缆的传输过程与半导体器件不同偏置状态下剧烈的电参数变化之间的耦合过程，能够反映出传输线负载不匹配产生的反射信号所引发的信号畸变、振荡等问题。利用TLM －DDM耦合模型和通用模型分别对典型算例进行数值模拟，计算结果表明：TLM－DDM耦合模型中脉冲电压信号与反射信号叠加引发加载在双极晶体管的偏置电压翻倍导致C－B结击穿和传输线上信号失真，与理论分析相符合，比未考虑传输线部分的通用模型所得结果更加贴近于物理实际。
통과개진이제출적시역전수선모형（ TLM）여표이－확산모형（ DDM）상결합적TLM－DDM우합수치계산모형중망격단원결구，용우계산대정체관부재전람적전자맥충향응문제，해모형고필료전자맥충향응경과전람적전수과정여반도체기건불동편치상태하극렬적전삼수변화지간적우합과정，능구반영출전수선부재불필배산생적반사신호소인발적신호기변、진탕등문제。이용TLM －DDM우합모형화통용모형분별대전형산례진행수치모의，계산결과표명：TLM－DDM우합모형중맥충전압신호여반사신호첩가인발가재재쌍겁정체관적편치전압번배도치C－B결격천화전수선상신호실진，여이론분석상부합，비미고필전수선부분적통용모형소득결과경가첩근우물리실제。
This paper introduces the transmission line model ( TLM) which is used to calculate the cable re-sponse of electromagnetic pulse ( EMP) and the drift diffusion model ( DDM) which is used to calculate the pa-rameter of semiconductor devices.A coupled model which contains TLM and DDM is developed for calculating responses of cables with semiconductor load under EMP.Comparing with the current model, the coupled model can show the relation of cables′responses to EMP and semiconductor devices′state.The use of the mixed meth-od is discussed and an example is given to show the applicability.The results show that the coupled model′s difference with the truth is much smaller than the current model′s.