磁性材料及器件
磁性材料及器件
자성재료급기건
JOURNAL OF MAGNETIC MATERIALS AND DEVICES
2015年
3期
1-4,20
,共5页
高倩%黄美东%王小龙%杨明敏
高倩%黃美東%王小龍%楊明敏
고천%황미동%왕소룡%양명민
Co/CoO双层膜%交换偏置%结构%磁性能
Co/CoO雙層膜%交換偏置%結構%磁性能
Co/CoO쌍층막%교환편치%결구%자성능
Co/CoO bilayer%exchange bias%microstructure%magnetic property
为了探究FM/AFM双层膜中的交换偏置现象,利用磁控溅射法制备Co/CoO薄膜,通过改变沉积时间获得了不同CoO层厚度的Co/CoO双层膜系。通过X射线衍射(XRD)、扫描电子显微镜(SEM)、交变梯度磁强计(AGM)、超导量子干涉仪(SQUID)分别对样品的物相结构、表面形貌及磁性能进行分析和表征。结果表明,AFM层厚度对表面形貌有一定的影响,但表面成分不随AFM层厚度的变化而变化。所有样品的XRD谱均出现CoO(002)衍射峰,说明薄膜为晶态。不同厚度的Co/CoO双层膜样品表现出不同的矫顽力和偏置场,低温下样品的磁滞回线表现出明显的交换偏置效应,并且磁偏移量随膜层厚度增加呈现逐渐增大的趋势。当CoO厚度为62.5nm时,偏置场最大可达到420kA/m。
為瞭探究FM/AFM雙層膜中的交換偏置現象,利用磁控濺射法製備Co/CoO薄膜,通過改變沉積時間穫得瞭不同CoO層厚度的Co/CoO雙層膜繫。通過X射線衍射(XRD)、掃描電子顯微鏡(SEM)、交變梯度磁彊計(AGM)、超導量子榦涉儀(SQUID)分彆對樣品的物相結構、錶麵形貌及磁性能進行分析和錶徵。結果錶明,AFM層厚度對錶麵形貌有一定的影響,但錶麵成分不隨AFM層厚度的變化而變化。所有樣品的XRD譜均齣現CoO(002)衍射峰,說明薄膜為晶態。不同厚度的Co/CoO雙層膜樣品錶現齣不同的矯頑力和偏置場,低溫下樣品的磁滯迴線錶現齣明顯的交換偏置效應,併且磁偏移量隨膜層厚度增加呈現逐漸增大的趨勢。噹CoO厚度為62.5nm時,偏置場最大可達到420kA/m。
위료탐구FM/AFM쌍층막중적교환편치현상,이용자공천사법제비Co/CoO박막,통과개변침적시간획득료불동CoO층후도적Co/CoO쌍층막계。통과X사선연사(XRD)、소묘전자현미경(SEM)、교변제도자강계(AGM)、초도양자간섭의(SQUID)분별대양품적물상결구、표면형모급자성능진행분석화표정。결과표명,AFM층후도대표면형모유일정적영향,단표면성분불수AFM층후도적변화이변화。소유양품적XRD보균출현CoO(002)연사봉,설명박막위정태。불동후도적Co/CoO쌍층막양품표현출불동적교완력화편치장,저온하양품적자체회선표현출명현적교환편치효응,병차자편이량수막층후도증가정현축점증대적추세。당CoO후도위62.5nm시,편치장최대가체도420kA/m。
To research exchange bias effects in bilayer systems, Co/CoO bilayers with different thickness were fabricated by magnetron sputtering technique. The thicknesses of the bilayers was controlled by deposition time. Crystalline structure and surface morphology of the films were measured by X-ray diffraction(XRD) and scanning electron microscopy(SEM), respectively. Both the alternating gradient magnetometer(AGM) and the superconducting quantum interference device(SQUID) were employed to characterize magnetic properties of the films at room and low temperatures. The results show that the thicknesses of CoO layer of the bilayer has impacts on the coerciyty of the samples at room temperature, significant exchange bias effect was observed at low temperature, and the exchange bias field(EBF) increases with the thickness of the CoO layer. The maximum EBF achieves 5266 Oe for sample with CoO thickness of 62.5 nm.