CAJ | 학술논문

通过对TFT-LCD 制造过程中GOA单元不良原因的研究,提出了改善 GOA单元不良的方法.分析表明静电放电(ESD)的发生在于电容瞬间释放的电流过大,导致过细的金属线熔化；沟道桥接和开裂的发生在于显影效应,显影方向以及图案密度,导致局部区域沟道光刻胶厚度偏厚和偏薄.采用静电分散释放的连线设计,ESD的发生率从5．4％降低到0.04％以下.GOA单元两侧增加测试图样(Dummy Pattern)的设计防止沟道桥接的发生,减压干燥(VCD)抽气曲线的调整和软烘(Soft Bake)底部温度的优化措施防止沟道开裂的发生,沟道桥接和开裂的发生率从13．4％降低到1．22％以下.
통과대TFT-LCD 제조과정중GOA단원불량원인적연구,제출료개선 GOA단원불량적방법.분석표명정전방전(ESD)적발생재우전용순간석방적전류과대,도치과세적금속선용화；구도교접화개렬적발생재우현영효응,현영방향이급도안밀도,도치국부구역구도광각효후도편후화편박.채용정전분산석방적련선설계,ESD적발생솔종5．4％강저도0.04％이하.GOA단원량측증가측시도양(Dummy Pattern)적설계방지구도교접적발생,감압간조(VCD)추기곡선적조정화연홍(Soft Bake)저부온도적우화조시방지구도개렬적발생,구도교접화개렬적발생솔종13．4％강저도1．22％이하.
The reason for GOA unit defect is analyzed in the TFT-LCD manufacturing process,and the improving methods are given.The results show that the occurrence of the ESD is ascribed to excessive instantaneous release current of capacitance,leading to superfine wire melting,while the occurrence of the Channel Bridge and Open is related to the development effect,development direction and pat-tern density,which cause the abnormal channel photo resist.The design of electrostatic dispersion re-lease makes the incidence of ESD reduce from 5.4% to below 0.04%.The design of adding Dummy Pattern in both sides of GOA unit prevents Channel Bridge,meanwhile the adj ustment of Vacuum Dry extraction curve and the optimization of Soft Bake bottom temperature prevent Channel Open,which make the incidence of Channel Bridge and Open decrease from 13.4% to below 1.22%.