陶瓷学报
陶瓷學報
도자학보
JOURNAL OF CERAMICS
2015年
3期
270-274
,共5页
叶辉华%罗凌虹%程亮%石纪军%吴也凡
葉輝華%囉凌虹%程亮%石紀軍%吳也凡
협휘화%라릉홍%정량%석기군%오야범
晶粒尺寸%吸水率%相对密度%烧结温度
晶粒呎吋%吸水率%相對密度%燒結溫度
정립척촌%흡수솔%상대밀도%소결온도
grain size%bibulous rate%relative density%sintering temperature
本实验研究了氧化钇全稳定氧化锆(8YSZ)纳米粉体的常压烧结行为。根据阿基米德原理测定烧结试样的吸水率和体积密度,采用透射电子显微镜观察8YSZ粉体的形貌和尺寸大小及团聚状态等,采用扫描电子显微镜观察不同烧成温度下烧结样品的断面和腐蚀表面,进一步判断烧结试样的致密度、微观结构和计算晶粒尺寸。分析和探讨了纳米粉体烧结的致密化过程,烧结工艺对致密度和晶粒大小的影响,得到了8YSZ纳米粉体的常压烧结温度为1500℃,保温时间为4 h。结果显示,采用该工艺,可以得到吸水率0.13%,相对密度98.64%,晶粒尺寸5.84μm的8YSZ烧结体。
本實驗研究瞭氧化釔全穩定氧化鋯(8YSZ)納米粉體的常壓燒結行為。根據阿基米德原理測定燒結試樣的吸水率和體積密度,採用透射電子顯微鏡觀察8YSZ粉體的形貌和呎吋大小及糰聚狀態等,採用掃描電子顯微鏡觀察不同燒成溫度下燒結樣品的斷麵和腐蝕錶麵,進一步判斷燒結試樣的緻密度、微觀結構和計算晶粒呎吋。分析和探討瞭納米粉體燒結的緻密化過程,燒結工藝對緻密度和晶粒大小的影響,得到瞭8YSZ納米粉體的常壓燒結溫度為1500℃,保溫時間為4 h。結果顯示,採用該工藝,可以得到吸水率0.13%,相對密度98.64%,晶粒呎吋5.84μm的8YSZ燒結體。
본실험연구료양화을전은정양화고(8YSZ)납미분체적상압소결행위。근거아기미덕원리측정소결시양적흡수솔화체적밀도,채용투사전자현미경관찰8YSZ분체적형모화척촌대소급단취상태등,채용소묘전자현미경관찰불동소성온도하소결양품적단면화부식표면,진일보판단소결시양적치밀도、미관결구화계산정립척촌。분석화탐토료납미분체소결적치밀화과정,소결공예대치밀도화정립대소적영향,득도료8YSZ납미분체적상압소결온도위1500℃,보온시간위4 h。결과현시,채용해공예,가이득도흡수솔0.13%,상대밀도98.64%,정립척촌5.84μm적8YSZ소결체。
This experiment studied the sintering behavior of yttria fully stabilized zirconia (8YSZ) nanopowders under atmospheric pressure. The bibulous rate and volume density of sintered samples were determined according to the principle of Archimedes. The morphology, grain size and reunited state of 8YSZ powders were observed by using a transmission electron microscope. The cross section and corrosion surface of the samples sintered at different sintering temperatures were examined by using a scanning electron microscope, and the density, microstructure and grain sizes of the sintered samples were tested. The analysis and discussion on the densiifcation process of the sintered nanopowders, the inlfuence of the sintering process on the density and grain size revealed the 8YSZ sintered compacts with the bibulous rate of 0.13%, the relative density of 98.64%, and the grain size of 5.84 μm can be obtained under atmospheric pressure when the sintering temperature is 1500℃ and the holding time is 4 h.