电子与封装
電子與封裝
전자여봉장
EIECTRONICS AND PACKAGING
2015年
6期
16-18,48
,共4页
热阻测试原理%测试电流%校准系数%参考结温%测试夹具
熱阻測試原理%測試電流%校準繫數%參攷結溫%測試夾具
열조측시원리%측시전류%교준계수%삼고결온%측시협구
thermal resistance testing principle%testing current%calibration coefficient%reference junction temperature%test fixture
热阻值是评判功率MOSFET器件热性能优劣的重要参数，因此热阻测试至关重要。通过对红外线扫描、液晶示温法、标准电学法3种热阻测试方法比较其优缺点，总结出标准电学法测试比较适合MOSFET热阻测试。在此基础上依据热阻测试系统Phase11，阐述功率MOSFET热阻测试原理，并着重通过实例对标准电学法测试热阻的影响因素测试电流Im、校准系数K、参考结温Tj 以及测试夹具进行了具体分析，总结出减少热阻测试误差的方法，为热阻的精确测试以及器件测试标准的制定提供依据。
熱阻值是評判功率MOSFET器件熱性能優劣的重要參數，因此熱阻測試至關重要。通過對紅外線掃描、液晶示溫法、標準電學法3種熱阻測試方法比較其優缺點，總結齣標準電學法測試比較適閤MOSFET熱阻測試。在此基礎上依據熱阻測試繫統Phase11，闡述功率MOSFET熱阻測試原理，併著重通過實例對標準電學法測試熱阻的影響因素測試電流Im、校準繫數K、參攷結溫Tj 以及測試夾具進行瞭具體分析，總結齣減少熱阻測試誤差的方法，為熱阻的精確測試以及器件測試標準的製定提供依據。
열조치시평판공솔MOSFET기건열성능우렬적중요삼수，인차열조측시지관중요。통과대홍외선소묘、액정시온법、표준전학법3충열조측시방법비교기우결점，총결출표준전학법측시비교괄합MOSFET열조측시。재차기출상의거열조측시계통Phase11，천술공솔MOSFET열조측시원리，병착중통과실례대표준전학법측시열조적영향인소측시전류Im、교준계수K、삼고결온Tj 이급측시협구진행료구체분석，총결출감소열조측시오차적방법，위열조적정학측시이급기건측시표준적제정제공의거。
Thermal resistance value is an important parameter for judging power MOSFET device thermal performance advantages and disadvantages, so thermal resistance test is very important. In the paper, through of three thermal resistance test methods, the infrared scanning, LCD shows temperature method, standard electrical method compares the advantages and disadvantages, summed up the standard electrical test method is more suitable for MOSFET thermal resistance test. Based on according to the heat resistance test system Phase11, elaborated the principle of power MOSFET thermal resistance test, and emphatically through examples on the standard electrical method for testing resistance factors: test current Im, calibration coefficient K, reference temperature Tj and test fixture nodes were analyzed in detail, summed up the methods of reducing thermal resistance measurement error, for the thermal resistance of the exact test and device testing standards provide the basis for the development.
