上海计量测试
上海計量測試
상해계량측시
SHANGHAI MEASUREMENT AND TESTING
2015年
3期
23-24,27
,共3页
半导体级高纯氨水%检测%杂质元素
半導體級高純氨水%檢測%雜質元素
반도체급고순안수%검측%잡질원소
semiconductor grade ammonia%determination%impurity element
用高分辨电感耦合等离子体质谱测定半导体级高纯氨水中的痕量金属杂质,用直接稀释法,把高纯氨水稀释10倍后,用标准加入法进行上机检测,前处理简单、快速,避免了在样品前处理时的污染问题。高分辨电感耦合等离子体质谱可以消除多分子离子干扰,降低检出限,提高定量准确性。该方法的检出限为0.31~14.4 ng/L ,加标法回收率为91.5%~108.6%。该方法简单,结果可靠,适用于高纯氨水中痕量元素的快速测定。
用高分辨電感耦閤等離子體質譜測定半導體級高純氨水中的痕量金屬雜質,用直接稀釋法,把高純氨水稀釋10倍後,用標準加入法進行上機檢測,前處理簡單、快速,避免瞭在樣品前處理時的汙染問題。高分辨電感耦閤等離子體質譜可以消除多分子離子榦擾,降低檢齣限,提高定量準確性。該方法的檢齣限為0.31~14.4 ng/L ,加標法迴收率為91.5%~108.6%。該方法簡單,結果可靠,適用于高純氨水中痕量元素的快速測定。
용고분변전감우합등리자체질보측정반도체급고순안수중적흔량금속잡질,용직접희석법,파고순안수희석10배후,용표준가입법진행상궤검측,전처리간단、쾌속,피면료재양품전처리시적오염문제。고분변전감우합등리자체질보가이소제다분자리자간우,강저검출한,제고정량준학성。해방법적검출한위0.31~14.4 ng/L ,가표법회수솔위91.5%~108.6%。해방법간단,결과가고,괄용우고순안수중흔량원소적쾌속측정。
Determination of trace metal in semiconductor grade ammonia by HR-ICP-MS, sample preparation was just simple diluted ten times, and all elements were analyzed with standard addition. The result indicate that the method is easier and fast, the method avoid the pollution of sample. HR-ICP-MS can eliminate multimolecular ion disruption, reduce detect limit, improve quantitative accuracy. The detection limits were 0.31 to 14.4 ng/L with recoveries of 91.5%to 108.6%. The experimental results show that the method is simple, the result is reliable, and suitable for rapid determination of trace elements in semiconductor grade ammonia.