CAJ | 학술논문

采用射频磁控溅射沉积并结合热处理制备Mg2Si/Si异质结，研究了溅射时间对Mg2Si/Si异质结的结构以及电阻率的影响。首先在P型Si衬底沉积不同厚度的Mg膜，然后进行低真空热处理，制备不同厚度的Mg 2 Si/Si异质结。通过XRD、SEM对Mg2Si/Si异质结中Mg2Si的晶体结构、异质结表面和剖面形貌进行分析，结果表明：制备了单一相Mg2Si薄膜，Mg2Si(220)衍射峰最强，异质结界面平整。通过四探针仪测量电阻率进行分析，发现电阻率随Mg 2 Si膜厚的增加而减小。
채용사빈자공천사침적병결합열처리제비Mg2Si/Si이질결，연구료천사시간대Mg2Si/Si이질결적결구이급전조솔적영향。수선재P형Si츤저침적불동후도적Mg막，연후진행저진공열처리，제비불동후도적Mg 2 Si/Si이질결。통과XRD、SEM대Mg2Si/Si이질결중Mg2Si적정체결구、이질결표면화부면형모진행분석，결과표명：제비료단일상Mg2Si박막，Mg2Si(220)연사봉최강，이질결계면평정。통과사탐침의측량전조솔진행분석，발현전조솔수Mg 2 Si막후적증가이감소。
Mg2Si/Si heterojunctions were prepared by RF-magnetron sputtering and heat treatment. The influences of sputtering time on the microstructures and the resistivity of the samples were investigated in detail. The different thickness of Mg films was deposited onto P-type Si substrates, and then low vacuum heat treatment was carried out. A series of Mg2Si/Si heterojunctions were prepared with different thicknesses. Crystal structure and cross-section of the prepared Mg2Si/Si heterojunctions were characterized by X-ray diffraction and scanning electron microscopy. The results show that single phase Mg2Si films are obtained, and Mg2Si (220) peak is the strongest. The interface of Mg2Si/Si heterojunction is smooth. Electrical resistivity is performed by four probe method. It decreases with the increase of the thickness of Mg2Si films.