电子元件与材料
電子元件與材料
전자원건여재료
ELECTRONIC COMPONENTS & MATERIALS
2015年
7期
38-41
,共4页
CuCrO2%射频磁控溅射%退火温度%结构%光学性能%光学带隙宽度
CuCrO2%射頻磁控濺射%退火溫度%結構%光學性能%光學帶隙寬度
CuCrO2%사빈자공천사%퇴화온도%결구%광학성능%광학대극관도
CuCrO2%radio frequency magnetron sputtering%annealing temperature%structure%optical properties%optical band gap
采用射频磁控溅射法在石英玻璃衬底上制备CuCrO2薄膜,研究退火温度对CuCrO2薄膜结构和光学性能的影响。结果表明:未经退火处理的CuCrO 2薄膜为非晶态,颗粒较小,可见光透射率仅为56%。退火处理能够改善CuCrO2薄膜的结构和透光性能。随着退火温度的升高,薄膜结晶化程度逐渐增强,孔洞缺陷逐渐减少,薄膜逐渐变得平整致密,薄膜的透光性能得到改善,薄膜的吸收边向短波方向移动。当退火温度为800℃时,薄膜的性能最优,可见光透射率达到70%。光学带隙宽度为3.06 eV。
採用射頻磁控濺射法在石英玻璃襯底上製備CuCrO2薄膜,研究退火溫度對CuCrO2薄膜結構和光學性能的影響。結果錶明:未經退火處理的CuCrO 2薄膜為非晶態,顆粒較小,可見光透射率僅為56%。退火處理能夠改善CuCrO2薄膜的結構和透光性能。隨著退火溫度的升高,薄膜結晶化程度逐漸增彊,孔洞缺陷逐漸減少,薄膜逐漸變得平整緻密,薄膜的透光性能得到改善,薄膜的吸收邊嚮短波方嚮移動。噹退火溫度為800℃時,薄膜的性能最優,可見光透射率達到70%。光學帶隙寬度為3.06 eV。
채용사빈자공천사법재석영파리츤저상제비CuCrO2박막,연구퇴화온도대CuCrO2박막결구화광학성능적영향。결과표명:미경퇴화처리적CuCrO 2박막위비정태,과립교소,가견광투사솔부위56%。퇴화처리능구개선CuCrO2박막적결구화투광성능。수착퇴화온도적승고,박막결정화정도축점증강,공동결함축점감소,박막축점변득평정치밀,박막적투광성능득도개선,박막적흡수변향단파방향이동。당퇴화온도위800℃시,박막적성능최우,가견광투사솔체도70%。광학대극관도위3.06 eV。
CuCrO2 films were prepared by the radio frequency magnetron sputtering method on the quartz glass substrate. The effects of annealing temperature on the structure and optical properties of CuCrO2films were investigated. The results show that the as-deposited CuCrO2 film is amorphous, in which particle is small,and its transparence in visible light is only 56%. Annealing treatment can improve the structure and optical properties of CuCrO2 films. With the annealing temperature increasing, the crystallization degree of CuCrO2 films increases, and the density of pore defects decreases, respectively. The films become smooth and compact gadually, and the light transmittance of the films increases with the increasing annealing temperature, the absorption edge of the films moves toward the short wavelength. When the annealing temperature is 800℃, the film has the best transmittance property, its transparence in visible light is 70%,and the optical band gab is about 3.06 eV.