CAJ | 학술논문

本研究在实验室自制的10 kW 圆柱形多模谐振腔式 MPCVD 装置中,研究了高功率沉积环境下,氮气在不同基片温度下对沉积的金刚石膜的影响。利用 SEM 表征对金刚石膜表面形貌的变化进行了分析,并结合 Raman 以及 XRD 的表征结果,分析了不同沉积温度下,氮气体积浓度与金刚石膜质量和晶粒尺寸间的关系。结果表明：引入氮气会同时起到提高沉积速率和增加二次形核的作用,并且金刚石膜的质量会随氮气体积浓度的增加而下降。随着基片温度的降低,N2对金刚石膜的影响将更多的表现为增加二次形核率。在基片温度为750℃时,通过研究不同氮气体积浓度下金刚石膜晶粒尺寸和结晶度的变化,得出当氮气体积浓度保持在0.03%~0.07%之间时,能获得晶粒尺寸为50 nm 左右且结晶度较好的纳米金刚石膜。
본연구재실험실자제적10 kW 원주형다모해진강식 MPCVD 장치중,연구료고공솔침적배경하,담기재불동기편온도하대침적적금강석막적영향。이용 SEM 표정대금강석막표면형모적변화진행료분석,병결합 Raman 이급 XRD 적표정결과,분석료불동침적온도하,담기체적농도여금강석막질량화정립척촌간적관계。결과표명：인입담기회동시기도제고침적속솔화증가이차형핵적작용,병차금강석막적질량회수담기체적농도적증가이하강。수착기편온도적강저,N2대금강석막적영향장경다적표현위증가이차형핵솔。재기편온도위750℃시,통과연구불동담기체적농도하금강석막정립척촌화결정도적변화,득출당담기체적농도보지재0.03%~0.07%지간시,능획득정립척촌위50 nm 좌우차결정도교호적납미금강석막。
The effects of nitrogen concentration on the deposition of diamond films were systematically investigated in a 10 kW home-made cylindrical overmoded MPCVD apparatus?Comprehensive analysis for the diamond films deposited in the condition of high microwave power as well as various nitrogen concentrations and substrate temperatures were carried out using the characterization results obtained from SEM,XRD and Raman?The results show that the injection of nitrogen could increase the deposition rate and secondary nucleation of diamond films,simultaneously?And the effect of increasing secondary nucleation would be dominated with the decrease of substrate temperature in the CVD diamond films growth?Therefore,there should be an appropriate nitrogen concentration range for the deposition of nanocrystalline diamond films with relatively high quality?The results of experiment carried out at the substrate temperature of 750 ℃ ascertain that the relative high quality nanocrystalline diamond films with the crystal size of around 50 nm could be prepared with nitrogen concentration of 0?03% - 0?07%.