CAJ | 학술논문

采用磁控溅射方法在玻璃基底上制备了Sn掺杂In3 O2（ In3 O2：Sn）半导体薄膜，通过XRD、XPS、四探针仪和分光光度计等测试表征，研究了生长速率对薄膜结构和光电性能的影响．结果表明：所制备的薄膜均具为（222）择优取向的立方锰铁矿结构，其结构参数和光电性能明显受到生长速率的影响．当生长速率为4 nm／min时，In3 O2：Sn薄膜具有最大的晶粒尺寸（32．5 nm）、最高的可见光区平均透过率（86．4％）和最大的优值因子（7．9×104Ω－1· m－1），其光电性能最好．同时采用Tauc公式计算了样品的光学带隙，结果表明：光学带隙随着生长速率的增大而单调减小．
채용자공천사방법재파리기저상제비료Sn참잡In3 O2（ In3 O2：Sn）반도체박막，통과XRD、XPS、사탐침의화분광광도계등측시표정，연구료생장속솔대박막결구화광전성능적영향．결과표명：소제비적박막균구위（222）택우취향적립방맹철광결구，기결구삼수화광전성능명현수도생장속솔적영향．당생장속솔위4 nm／min시，In3 O2：Sn박막구유최대적정립척촌（32．5 nm）、최고적가견광구평균투과솔（86．4％）화최대적우치인자（7．9×104Ω－1· m－1），기광전성능최호．동시채용Tauc공식계산료양품적광학대극，결과표명：광학대극수착생장속솔적증대이단조감소．
The thin films of In3 O2 doped with Sn ( In3 O2:Sn ) were prepared on the glass substrates by magnetron sputtering method.The prepared samples were characterized by X-ray diffraction ( XRD) , X-ray photoelectron spectroscopy ( XPS) , four-point probe and spectrophotometer, respectively.The influence of the growth rate on the microstructural and optoelectrical properties of the samples was investigated. Experimental results show that the In3 O2:Sn films are polycrystalline in nature having a cubic bixbyite type crystal structure with a preferred grain orientation in the ( 222 ) direction.The growth rate significantly affects the crystal structure and optoelectrical properties of the films.The In3 O2:Sn samples prepared at the growth rate of 4 nm/min exhibit the highest figure of merit (7.9 ×104Ω-1 · m-1 ) , which has the maximum grain size (32.5 nm) and the highest average transmittances in the visible light range (86.4%).Furthermore, the optical bandgap of the samples was calculated by the Tauc’ s law.A red shift of the optical bandgap is observed with an increase in the growth rate.