新型炭材料
新型炭材料
신형탄재료
NEW CARBON MATERIALS
2015年
3期
230-235
,共6页
黄珊%王继刚%刘松%张玥晨%钱柳%梁杰
黃珊%王繼剛%劉鬆%張玥晨%錢柳%樑傑
황산%왕계강%류송%장모신%전류%량걸
微波法%碳化硅%纳米线%结构表征%光致发光
微波法%碳化硅%納米線%結構錶徵%光緻髮光
미파법%탄화규%납미선%결구표정%광치발광
Microwave%SiC%Nanowires%Structural characterization%Photoluminescence
以Si粉、SiO2粉和人造石墨为原料,在1480℃、4 kW、80 min的真空微波辐照条件下快速高效地合成SiC纳米线。利用SEM、TEM、XRD等对所得产物的微观结构解析表明,在未使用催化剂的条件下,基于气固( VS)机制可成功制备出β型SiC。根据坩埚中的部位不同,所得SiC呈现出不同的形貌。坩埚上层的产物呈亮绿色,较为纯净,主要为直径约150 nm的纳米棒,并含有部分微米级SiC晶粒,表面氧化迹象不明显。其余部分产物呈灰绿色,主要是直径为20~50 nm的SiC/SiO2同轴纳米线(表层的SiO2厚度约2 nm),并夹杂有未反应完全的石墨和SiO2。利用波长为240 nm的激发光分别对SiC纳米棒和同轴纳米线的光致发光特性的测试表明,两者均可观察到峰位在390 nm左右的发射峰,此结果与所报道的β-SiC纳米材料的发光性能相比,蓝移程度更高。
以Si粉、SiO2粉和人造石墨為原料,在1480℃、4 kW、80 min的真空微波輻照條件下快速高效地閤成SiC納米線。利用SEM、TEM、XRD等對所得產物的微觀結構解析錶明,在未使用催化劑的條件下,基于氣固( VS)機製可成功製備齣β型SiC。根據坩堝中的部位不同,所得SiC呈現齣不同的形貌。坩堝上層的產物呈亮綠色,較為純淨,主要為直徑約150 nm的納米棒,併含有部分微米級SiC晶粒,錶麵氧化跡象不明顯。其餘部分產物呈灰綠色,主要是直徑為20~50 nm的SiC/SiO2同軸納米線(錶層的SiO2厚度約2 nm),併夾雜有未反應完全的石墨和SiO2。利用波長為240 nm的激髮光分彆對SiC納米棒和同軸納米線的光緻髮光特性的測試錶明,兩者均可觀察到峰位在390 nm左右的髮射峰,此結果與所報道的β-SiC納米材料的髮光性能相比,藍移程度更高。
이Si분、SiO2분화인조석묵위원료,재1480℃、4 kW、80 min적진공미파복조조건하쾌속고효지합성SiC납미선。이용SEM、TEM、XRD등대소득산물적미관결구해석표명,재미사용최화제적조건하,기우기고( VS)궤제가성공제비출β형SiC。근거감과중적부위불동,소득SiC정현출불동적형모。감과상층적산물정량록색,교위순정,주요위직경약150 nm적납미봉,병함유부분미미급SiC정립,표면양화적상불명현。기여부분산물정회록색,주요시직경위20~50 nm적SiC/SiO2동축납미선(표층적SiO2후도약2 nm),병협잡유미반응완전적석묵화SiO2。이용파장위240 nm적격발광분별대SiC납미봉화동축납미선적광치발광특성적측시표명,량자균가관찰도봉위재390 nm좌우적발사봉,차결과여소보도적β-SiC납미재료적발광성능상비,람이정도경고。
SiC nanowires were synthesized by a microwave-heating method at 1480 ° C for 80 min under vacuum, using silicon powder, silica dioxide powder and artificial graphite as raw materials. SEM, TEM and XRD were used to investigate the microstruc-ture of the samples and excitation light with wavelength of 240 nm was used to test the photoluminescence properties of the products. Results indicated thatβ-SiC can be synthesized directly without using a catalyst by the vapor-solid growth mechanism. The samples exhibited different morphologies and sizes at different zones due to the temperature differences. The products in an upper crucible were bright-green, relatively pure SiC, consisting of mainly nano-rods with a diameter of about 150 nm and small amount of SiC micro-crystals, and surface oxidation was not obvious. The products in other zones were grey-green with lots of SiC/SiO2 coaxial nanowires with a diameter around 20-50 nm and a SiO2 surface layer of thickness about 2 nm, and there was also some un-reacted graphite and silica dioxide. Both the SiC nano-rods and SiC/SiO2 coaxial nanowires exhibited a strong broad photoluminescence peak at a wavelength of about 390 nm and a high degree of blue-shift compared with the reported luminescence ofβ-SiC nano-mate-rials.