CAJ | 학술논문

为适应柔性有源有矩阵有机发光二极管（AMOLED）等新型显示技术发展的需要，将低温溶液处理的氧化锌作为半导体层、电化学氧化的氧化铝钕作为栅绝缘层，制备了氧化锌薄膜晶体管（TFT）．制备氧化锌半导体层所用的前驱体溶液为无碳的 Zn（OH）x-（NH3）y（2－x）＋水溶液，这种氨络合物溶液制备简单、成本低，并且由于容易形成高活性的氢氧自由基，使得氨－金属之间的分解所需要的活化能较低，生成氧化锌所需的能量较小，可以在180℃的较低温度下获得氧化锌多晶薄膜．所制备的 TFT 器件的最高迁移率可达0．9 cm2／（V·s）．这种低温氧化锌薄膜工艺与室温电化学氧化的栅绝缘层工艺相结合，具有温度低和迁移率高的特点，完全能与柔性衬底兼容，在柔性显示中具有很大的应用前景．
위괄응유성유원유구진유궤발광이겁관（AMOLED）등신형현시기술발전적수요，장저온용액처리적양화자작위반도체층、전화학양화적양화려녀작위책절연층，제비료양화자박막정체관（TFT）．제비양화자반도체층소용적전구체용액위무탄적 Zn（OH）x-（NH3）y（2－x）＋수용액，저충안락합물용액제비간단、성본저，병차유우용역형성고활성적경양자유기，사득안－금속지간적분해소수요적활화능교저，생성양화자소수적능량교소，가이재180℃적교저온도하획득양화자다정박막．소제비적 TFT 기건적최고천이솔가체0．9 cm2／（V·s）．저충저온양화자박막공예여실온전화학양화적책절연층공예상결합，구유온도저화천이솔고적특점，완전능여유성츤저겸용，재유성현시중구유흔대적응용전경．
In order to meet the requirements of novel display technologies such as flexible active-matrix organic light-emitting diodes (AMOLED),thin film transistors (TFTs)are fabricated,with low-temperature solution-pro-cessed ZnO as the semiconductor layer and with electrochemical oxidized alumina neodymium as the gate dielectric layer.In the preparation of ZnO semiconductor layer,carbon-free aqueous Zn(OH)x (NH3 )y(2 -x)+ solution with low cost and fabrication simplicity is employed,and,more importantly,the energy for metal-ammine dissociation and ZnO formation is rather low thanks to the highly activated hydroxyl radicals.As a result,ZnO polycrystalline films can be realized at a relatively low temperature,namely 1 80℃.The proposed low-temperature solution-pro-cessed ZnO fabrication method combining with room-temperature electrochemically-oxidized gate dielectric layer helps achieve high mobility up to 0.9 cm2 /(V·s),and is completely compatible with flexible substrates,so that it meets the demand of flexible electronic devices well.