CAJ | 학술논문

采用原子层沉积工艺( ALD)生长均匀致密的三氧化二铝( Al2 O3)薄层对氮化硅( SiNx )绝缘层进行修饰,研究了铟镓锌氧薄膜晶体管( IGZO-TFTs)器件的性能。当Al2 O3修饰层厚度为4 nm时,绝缘层-有源层界面的最大缺陷态密度相比于未修饰器件降低了17.2%,器件性能得到显著改善。场效应迁移率由1.19 cm2/(V·s)提高到7.11 cm2/(V·s),阈值电压由39.70 V降低到25.37 V,1 h正向偏压应力下的阈值电压漂移量由2.19 V减小到1.41 V。
채용원자층침적공예( ALD)생장균균치밀적삼양화이려( Al2 O3)박층대담화규( SiNx )절연층진행수식,연구료인가자양박막정체관( IGZO-TFTs)기건적성능。당Al2 O3수식층후도위4 nm시,절연층-유원층계면적최대결함태밀도상비우미수식기건강저료17.2%,기건성능득도현저개선。장효응천이솔유1.19 cm2/(V·s)제고도7.11 cm2/(V·s),역치전압유39.70 V강저도25.37 V,1 h정향편압응력하적역치전압표이량유2.19 V감소도1.41 V。
Top-contact thin-film transistors( TFTs) were fabricated using SiNx as the gate insulator and InGaZnO as the channel layer. The insulator was modified by Al2 O3 layer and its effect on the performance of IGZO-TFTs was investagated. The results show that TFTs with 4-nm-thick Al2 O3 film exhibits the best electrical performance. The best performance can be attributed to the suppression of maximum density of surface states at the channel-insulator interface which is reduced by 17 . 2%contrasting to the TFTs without Al2 O3 buffer layers. The field effect mobility increases from 1. 19 to 7. 11 cm2/(V·s), and the threshold voltage decreases from 39. 70 to 25. 37 V. Under bias stress for 1 h, the threshold voltage shift decreases from 2. 19 to 1. 41 V/dec.