发光学报
髮光學報
발광학보
CHINESE JOURNAL OF LUMINESCENCE
2015年
8期
969-975
,共7页
陈智慧%肖思%何军%顾兵
陳智慧%肖思%何軍%顧兵
진지혜%초사%하군%고병
双光子吸收%自由载流子吸收%砷化镓单晶%光通讯波长
雙光子吸收%自由載流子吸收%砷化鎵單晶%光通訊波長
쌍광자흡수%자유재류자흡수%신화가단정%광통신파장
two-photon absorption%free carrier absorption%GaAs crystal%telecommunication wavelengths
采用Z-扫描和泵浦-探测技术,在光通讯波段对砷化镓( GaAs)单晶进行了非线性动力学以及非线性光学的实验研究。飞秒泵浦-探测实验结果表明,三阶非线性光学效应源于砷化镓单晶对飞秒激光的瞬态双光子吸收,而五阶非线性光学效应源于砷化镓单晶双光子吸收诱导的自由载流子吸收效应。通过Z扫描实验,得到了关于GaAs单晶所有的非线性光学参数,包括双光子吸收系数、三阶非线性折射系数、双光子吸收诱导的自由载流子吸收截面以及双光子吸收诱导的自由载流子折射截面。结果表明,砷化镓单晶在制造光限幅器件和光电探测器方面具有良好的发展前景。
採用Z-掃描和泵浦-探測技術,在光通訊波段對砷化鎵( GaAs)單晶進行瞭非線性動力學以及非線性光學的實驗研究。飛秒泵浦-探測實驗結果錶明,三階非線性光學效應源于砷化鎵單晶對飛秒激光的瞬態雙光子吸收,而五階非線性光學效應源于砷化鎵單晶雙光子吸收誘導的自由載流子吸收效應。通過Z掃描實驗,得到瞭關于GaAs單晶所有的非線性光學參數,包括雙光子吸收繫數、三階非線性摺射繫數、雙光子吸收誘導的自由載流子吸收截麵以及雙光子吸收誘導的自由載流子摺射截麵。結果錶明,砷化鎵單晶在製造光限幅器件和光電探測器方麵具有良好的髮展前景。
채용Z-소묘화빙포-탐측기술,재광통신파단대신화가( GaAs)단정진행료비선성동역학이급비선성광학적실험연구。비초빙포-탐측실험결과표명,삼계비선성광학효응원우신화가단정대비초격광적순태쌍광자흡수,이오계비선성광학효응원우신화가단정쌍광자흡수유도적자유재류자흡수효응。통과Z소묘실험,득도료관우GaAs단정소유적비선성광학삼수,포괄쌍광자흡수계수、삼계비선성절사계수、쌍광자흡수유도적자유재류자흡수절면이급쌍광자흡수유도적자유재류자절사절면。결과표명,신화가단정재제조광한폭기건화광전탐측기방면구유량호적발전전경。
We report experimental investigations of nonlinear dynamics and optical nonlinearities of GaAs single crystal in the telecommunication windows. Femtosecond time-resolved degenerate pump-probe measurements indicate that the observed third-order nonlinear process originates from the instantaneous effect whereas the fifth-order effect arises from two-photon absorption (2PA) induced free-carrier nonlinearities. By performing the Z-scan experiments with femtosecond laser pulses at the wavelengths of 1 300 nm and 1 500 nm, we determine all nonlinear parameters of GaAs crystal, including 2PA coefficient, third-order nonlinear refraction index, 2PA-induced free-carrier absorption cross section, and 2PA-induced free-carrier refraction cross section. These results suggest that GaAs crystal is a promising candidate for applications on optical limiting and photodetector at the telecommunication wavelengths.