CAJ | 학술논문

采用分子束外延( MBE)生长技术生长了周期厚度不同的1 eV吸收带边的GaN0.03 As0.97/In0.09 Ga0.91 As应变补偿短周期超晶格( SPSL)。高分辨率X射线衍射( HRXRD)测量结果显示，当周期厚度从6 nm增加到20 nm时，超晶格的结晶质量明显改善。然而，当周期厚度继续增加时，超晶格品质劣化。对超晶格周期良好的样品通过退火优化，获得了具有低温光致发光现象的高含N量GaNAs/InGaAs超晶格，吸收带边位于1 eV附近。使用10个周期的GaNAs/InGaAs超晶格(10 nm/10 nm)和GaAs组成的p-i-n太阳电池的短路电流达到10.23 mA/cm2。经聚光测试获得的饱和电流密度、二极管理想因子与由电池暗态电流-电压曲线得到的结果一致。
채용분자속외연( MBE)생장기술생장료주기후도불동적1 eV흡수대변적GaN0.03 As0.97/In0.09 Ga0.91 As응변보상단주기초정격( SPSL)。고분변솔X사선연사( HRXRD)측량결과현시，당주기후도종6 nm증가도20 nm시，초정격적결정질량명현개선。연이，당주기후도계속증가시，초정격품질열화。대초정격주기량호적양품통과퇴화우화，획득료구유저온광치발광현상적고함N량GaNAs/InGaAs초정격，흡수대변위우1 eV부근。사용10개주기적GaNAs/InGaAs초정격(10 nm/10 nm)화GaAs조성적p-i-n태양전지적단로전류체도10.23 mA/cm2。경취광측시획득적포화전류밀도、이겁관이상인자여유전지암태전류-전압곡선득도적결과일치。
Period thickness-dependent GaNAs/InGaAs short-period superlattice and solar cells with an absorption edge of around 1 eV were grown by MBE. High-resolution X-ray diffraction ( HRXRD) measurements indicate that the crystalline quality of SPSL is improved while the period thickness increases from 6 nm to 20 nm. However, when the period further rises, the period repeat-ability and interface quality of SPSL degrade. By using a proper thickness and optimization of ther-mal annealing, good optical properties of SPSL with higher N content in the superlattice are achieved. The samples show an absorption edge of around 1 eV. The p-i-n solar cell using the opti-mized SPSL as the active region was fabricated. The short-circuit current density of the device rea-ches 10. 23 mA/cm2 . The ideality factor extrapolated by concentrator test of the p-i-n soalr cells is in good agreement with that of J-V curves under darkness.