传感器与微系统
傳感器與微繫統
전감기여미계통
TRANSDUCER AND MICROSYSTEM TECHNOLOGY
2015年
8期
9-12
,共4页
刘慧颖%李斌桥%高志远%姚素英
劉慧穎%李斌橋%高誌遠%姚素英
류혜영%리빈교%고지원%요소영
图像传感器%数字像素%脉冲宽度调制%动态范围%自适应参考电压
圖像傳感器%數字像素%脈遲寬度調製%動態範圍%自適應參攷電壓
도상전감기%수자상소%맥충관도조제%동태범위%자괄응삼고전압
image sensor%digital pixel%pulse width modulation%dynamic range%self-adaptive reference voltage
为提高数字像素图像传感器的动态范围,提出了一种具有自适应参考电压的脉冲宽度调制读出方法。该方法将像素阵列分成包含相同数目像素的像素块,通过参考电压产生模块使每个像素块的参考电压和像素块内光照强度相关,理论上这种结构能够将数字像素图像传感器的动态范围从48 dB提升至96 dB,实际仿真结果为88.16 dB。分析了像素分块内主要的噪声来源和参考电压产生模块的采样电容引入的偏差。采用65 nm CMOS工艺实现了4×4的像素块电路,在高光强和弱光强条件下分别将电路输出同理论计算值相比较,并分析了产生误差的原因。
為提高數字像素圖像傳感器的動態範圍,提齣瞭一種具有自適應參攷電壓的脈遲寬度調製讀齣方法。該方法將像素陣列分成包含相同數目像素的像素塊,通過參攷電壓產生模塊使每箇像素塊的參攷電壓和像素塊內光照彊度相關,理論上這種結構能夠將數字像素圖像傳感器的動態範圍從48 dB提升至96 dB,實際倣真結果為88.16 dB。分析瞭像素分塊內主要的譟聲來源和參攷電壓產生模塊的採樣電容引入的偏差。採用65 nm CMOS工藝實現瞭4×4的像素塊電路,在高光彊和弱光彊條件下分彆將電路輸齣同理論計算值相比較,併分析瞭產生誤差的原因。
위제고수자상소도상전감기적동태범위,제출료일충구유자괄응삼고전압적맥충관도조제독출방법。해방법장상소진렬분성포함상동수목상소적상소괴,통과삼고전압산생모괴사매개상소괴적삼고전압화상소괴내광조강도상관,이론상저충결구능구장수자상소도상전감기적동태범위종48 dB제승지96 dB,실제방진결과위88.16 dB。분석료상소분괴내주요적조성래원화삼고전압산생모괴적채양전용인입적편차。채용65 nm CMOS공예실현료4×4적상소괴전로,재고광강화약광강조건하분별장전로수출동이론계산치상비교,병분석료산생오차적원인。
A pulse width modulation( PWM)readout method,with self-adaptive reference voltage is introduced to enlarge dynamic range of digital image sensor. The pixel array is divided into blocks with the same pixel numbers, and each block generates its reference voltage through the voltage generator,which makes it related to illumination intensity within the block. It can double the dynamic range from 48 dB of typical PWM digital image sensors to 96 dB in theory,and the simulation shows it can achieve dynamic range of 88. 16 dB. Main noise sources within the pixel block and the deviation brought in by sampling capacitance are studied. A pixel block circuit of 4 ×4 is achieved by 65 nm CMOS process. Comparison of outputs and theory values are made under high and low luminance,and the reason which cause errors is analyzed.