仪表技术与传感器
儀錶技術與傳感器
의표기술여전감기
INSTRUMENT TECHNIQUE AND SENSOR
2015年
7期
21-23,44
,共4页
张瑞%梁庭%刘雨涛%王心心%王涛龙%熊继军
張瑞%樑庭%劉雨濤%王心心%王濤龍%熊繼軍
장서%량정%류우도%왕심심%왕도룡%웅계군
SOI 压阻式压力传感器%有限元分析(FEA)%浅凸台结构
SOI 壓阻式壓力傳感器%有限元分析(FEA)%淺凸檯結構
SOI 압조식압력전감기%유한원분석(FEA)%천철태결구
piezoresistive SOI pressure sensor%finite element analysis (FEA)%shallow boss structure
文中设计了一种浅凸台结构的 SOI 压阻式压力传感器。这种膜片结构解决了由于压力量程扩展导致传感器的灵敏度和线性度无法同时满足使用要求的问题。考虑电阻的设计约束以及浅凸台制作过程中的光刻和刻蚀偏差，采用 U型电阻保持高灵敏度和线性度。利用 ANSYS 软件模拟了膜片结构的力学性能，验证了理论分析的正确性；仿真优化了电阻的形状和位置，预估了传感器的性能。介绍了敏感单元的加工工艺。设计的传感器灵敏度为93.4μV/(V·kPa )，非线性误差小于0.22%，可实现对量程高达10 MPa 压力的测量。
文中設計瞭一種淺凸檯結構的 SOI 壓阻式壓力傳感器。這種膜片結構解決瞭由于壓力量程擴展導緻傳感器的靈敏度和線性度無法同時滿足使用要求的問題。攷慮電阻的設計約束以及淺凸檯製作過程中的光刻和刻蝕偏差，採用 U型電阻保持高靈敏度和線性度。利用 ANSYS 軟件模擬瞭膜片結構的力學性能，驗證瞭理論分析的正確性；倣真優化瞭電阻的形狀和位置，預估瞭傳感器的性能。介紹瞭敏感單元的加工工藝。設計的傳感器靈敏度為93.4μV/(V·kPa )，非線性誤差小于0.22%，可實現對量程高達10 MPa 壓力的測量。
문중설계료일충천철태결구적 SOI 압조식압력전감기。저충막편결구해결료유우압역량정확전도치전감기적령민도화선성도무법동시만족사용요구적문제。고필전조적설계약속이급천철태제작과정중적광각화각식편차，채용 U형전조보지고령민도화선성도。이용 ANSYS 연건모의료막편결구적역학성능，험증료이론분석적정학성；방진우화료전조적형상화위치，예고료전감기적성능。개소료민감단원적가공공예。설계적전감기령민도위93.4μV/(V·kPa )，비선성오차소우0.22%，가실현대량정고체10 MPa 압력적측량。
A piezoresistive SOI pressure sensor with a shallow-boss configuration was designed.This sensor solved the contra-diction between sensitivity and linearity for measurement range extension.U-shaped piezoresistors were adopted by taking design re-straints,photolithography and etching deviation for shallow-boss structure fabrication into account.In order to verify the theoretical analysis,ANSYS software was conducted to simulate the mechanical properties of diaphragm structure.Simulation results also were used to optimize location and geometry of piezoresistors and evaluate the performance of the sensor.Process flow was presented.The sensitivity of the device is 93.4 μV/ (V·kPa ) and the nonlinearity error is less than 0.22%.The device can realize pressure measurement within the range of 10 MPa.
