激光与红外
激光與紅外
격광여홍외
LASER & INFRARED
2015年
8期
959-963
,共5页
徐凯%路远%凌永顺%乔亚%唐聪
徐凱%路遠%凌永順%喬亞%唐聰
서개%로원%릉영순%교아%당총
二氧化钒薄膜%激光防护%最佳膜厚%磁控溅射法%红外相变特性
二氧化釩薄膜%激光防護%最佳膜厚%磁控濺射法%紅外相變特性
이양화범박막%격광방호%최가막후%자공천사법%홍외상변특성
vanadium oxide thin films%laser protection%optimum thickness%DC magnetron sputtering%infrared optical phase transition properties
为实现 VO2薄膜在激光防护应用中的最佳膜厚设计,采用椭圆偏振法测试分别得到 Si基底 VO2薄膜低温半导体态与高温金属态的光学常数,基于具有吸收特性薄膜的透射率计算理论,结合 VO2薄膜用于激光防护的需求,计算得到适用于激光防护的最佳膜厚。为验证计算方法准确性,根据入射激光波长10.6μm 为例计算的最佳膜厚,采用直流磁控溅射法在 Si 基底上制备具有相应膜厚的薄膜,利用傅里叶变换红外光谱测试分析了该薄膜的红外透射率相变特性,结果表明其红外透射率具有明显相变特性,3~5μm 波段的红外透射率对比值达到99%,λ=10.6μm 处相变前后的红外透射率分别为67.2%、4.2%,与理论计算透射率66.4%、3.3%误差较小,实测透射率对比值为93.8%,与理论预期95%基本相符,表明理论计算方法具有一定的准确性,根据最佳膜厚算法设计的 VO2薄膜适合应用于红外探测器的激光防护研究。
為實現 VO2薄膜在激光防護應用中的最佳膜厚設計,採用橢圓偏振法測試分彆得到 Si基底 VO2薄膜低溫半導體態與高溫金屬態的光學常數,基于具有吸收特性薄膜的透射率計算理論,結閤 VO2薄膜用于激光防護的需求,計算得到適用于激光防護的最佳膜厚。為驗證計算方法準確性,根據入射激光波長10.6μm 為例計算的最佳膜厚,採用直流磁控濺射法在 Si 基底上製備具有相應膜厚的薄膜,利用傅裏葉變換紅外光譜測試分析瞭該薄膜的紅外透射率相變特性,結果錶明其紅外透射率具有明顯相變特性,3~5μm 波段的紅外透射率對比值達到99%,λ=10.6μm 處相變前後的紅外透射率分彆為67.2%、4.2%,與理論計算透射率66.4%、3.3%誤差較小,實測透射率對比值為93.8%,與理論預期95%基本相符,錶明理論計算方法具有一定的準確性,根據最佳膜厚算法設計的 VO2薄膜適閤應用于紅外探測器的激光防護研究。
위실현 VO2박막재격광방호응용중적최가막후설계,채용타원편진법측시분별득도 Si기저 VO2박막저온반도체태여고온금속태적광학상수,기우구유흡수특성박막적투사솔계산이론,결합 VO2박막용우격광방호적수구,계산득도괄용우격광방호적최가막후。위험증계산방법준학성,근거입사격광파장10.6μm 위례계산적최가막후,채용직류자공천사법재 Si 기저상제비구유상응막후적박막,이용부리협변환홍외광보측시분석료해박막적홍외투사솔상변특성,결과표명기홍외투사솔구유명현상변특성,3~5μm 파단적홍외투사솔대비치체도99%,λ=10.6μm 처상변전후적홍외투사솔분별위67.2%、4.2%,여이론계산투사솔66.4%、3.3%오차교소,실측투사솔대비치위93.8%,여이론예기95%기본상부,표명이론계산방법구유일정적준학성,근거최가막후산법설계적 VO2박막괄합응용우홍외탐측기적격광방호연구。
In order to obtain optimum thickness of VO2 thin films in laser protection,optical constants of VO2 thin films at low and high temperature were measured by ellipsometry on Si substrate,and optimum thickness of VO2 thin films in laser protection was calculated based on the transmission theory of thin films with absorptive properties.Then VO2 thin films with specific thickness were prepared by DC magnetron sputtering,and FITR was employed to test and analyze the infrared transmission properties.The results show that the infrared transmittivity of the VO2 thin films with specific thickness has an obvious phase transition property.The relative change of infrared transmittivity rate at 3 ~5μm can reach 99%.The measured infrared transmittivity at 10.6 μm before and after phase transition are 67.2%, 4.2% respectively,and the rate of change is 93.8%,which are approximate to the calculated data 66.4%,3.3% and 95%,and prove the accuracy of the calculation method.The VO2 thin films which are designed by the calculation method of optimum thickness can be ideal material for laser protection of infrared detector.