低温与特气
低溫與特氣
저온여특기
LOW TEMPERATURE AND SPECIALTY GASES
2015年
4期
41-44
,共4页
MOCVD含氨尾气处理%LED氮化镓晶片%催化转化法%微分吸收法%循环利用法
MOCVD含氨尾氣處理%LED氮化鎵晶片%催化轉化法%微分吸收法%循環利用法
MOCVD함안미기처리%LED담화가정편%최화전화법%미분흡수법%순배이용법
ammonia containing MOCVD tail gas%LED epitaxy tail gas%gallium nitride LED wafers%catalytic transforma-tion%dfferential absorption
蓝光LED氮化镓晶片主要由超高纯氨(氮源)、有机金属化合物( MO源)和蓝宝石(衬底)三大核心材料,通过MOCVD半导体外延设备生长得到。现有工业主流方法不能把在生长过程中产生大量含氨尾气处理达到国标有组织排放的要求。介绍了三种可达标排放的新型专利MOCVD尾气处理方法:催化转化法,微分吸收法和循环利用法。
藍光LED氮化鎵晶片主要由超高純氨(氮源)、有機金屬化閤物( MO源)和藍寶石(襯底)三大覈心材料,通過MOCVD半導體外延設備生長得到。現有工業主流方法不能把在生長過程中產生大量含氨尾氣處理達到國標有組織排放的要求。介紹瞭三種可達標排放的新型專利MOCVD尾氣處理方法:催化轉化法,微分吸收法和循環利用法。
람광LED담화가정편주요유초고순안(담원)、유궤금속화합물( MO원)화람보석(츤저)삼대핵심재료,통과MOCVD반도체외연설비생장득도。현유공업주류방법불능파재생장과정중산생대량함안미기처리체도국표유조직배방적요구。개소료삼충가체표배방적신형전리MOCVD미기처리방법:최화전화법,미분흡수법화순배이용법。
Blue gallium nitride LED wafers obtained by epitaxy growth in MOCVD are made from three main raw materials:ultra high-purity ammonia ( nitrogen source) , organic metal compounds ( MO source) and sapphire ( substrate) .A large a-mount of ammonia containing tail gas produced during manufacturing process cannot meet the organized discharge national standard through current mainstream industrial decontamination methodologies.This paper introduces three new patent MOCVD ammonia containing tail gas decontamination methods which can meet the national discharge standard: catalytic, differential absorption and condensation.