CAJ | 학술논문

以 LaNiO3做缓冲层，用射频磁控溅射法在 SiO2/ Si（100）衬底上制备出0.9Pb（Sc0.5 Ta0.5）O3﹣0.1Pb-TiO3铁电薄膜.采用两步法在峰值温度750℃对薄膜进行退火.分析了薄膜的漏电流机制，研究表明，薄膜漏电流在低场强下（﹤32kV/ cm）符合欧姆（热电子发射）导电机制并受到晶界限制行为的影响，在中场强下（32~85kV/cm）空间电荷限制电流（SCLC）机制占据优势，在高场强下（85~100kV/ cm）富勒﹣诺丁海姆（FN）隧穿机制起主导作用.
이 LaNiO3주완충층，용사빈자공천사법재 SiO2/ Si（100）츤저상제비출0.9Pb（Sc0.5 Ta0.5）O3﹣0.1Pb-TiO3철전박막.채용량보법재봉치온도750℃대박막진행퇴화.분석료박막적루전류궤제，연구표명，박막루전류재저장강하（﹤32kV/ cm）부합구모（열전자발사）도전궤제병수도정계한제행위적영향，재중장강하（32~85kV/cm）공간전하한제전류（SCLC）궤제점거우세，재고장강하（85~100kV/ cm）부륵﹣낙정해모（FN）수천궤제기주도작용.
The 0. 9Pb(Sc0. 5 Ta0. 5 )O3 ﹣ 0. 1PbTiO3 ferroelectric thin films were PrePared on SiO2 / Si(100) substrates by radio frequency magnetron sPuttering technique with LaNiO3 buffer and electrode layer,and the films were subsequently annealed by a two ﹣ steP raPid thermal annealing aPProach. The mechanism of leakage current of the films was analyzed. Ohm conduction and a grain boundary limit behavior are resPonsible for the leakage be-havior of the films in a low electric field region,resPectively,a sPace charge limit conduction dominated in a me-dium electric field region,while an interface ﹣ limited Fowler ﹣ Nordheim tunneling is involved in their leakage behavior in a high electric field region.