电子元件与材料
電子元件與材料
전자원건여재료
ELECTRONIC COMPONENTS & MATERIALS
2015年
9期
86-91
,共6页
卢瑛%沈亮%沈亚%蒋鹏%卢燕
盧瑛%瀋亮%瀋亞%蔣鵬%盧燕
로영%침량%침아%장붕%로연
基片集成波导%共面波导%转换%电流探针%多层微波印刷电路板%三维微波电路
基片集成波導%共麵波導%轉換%電流探針%多層微波印刷電路闆%三維微波電路
기편집성파도%공면파도%전환%전류탐침%다층미파인쇄전로판%삼유미파전로
substrate integrated waveguide (SIW)%conductor backed coplanar waveguide (CBCPW)%transition%current probe%multilayer microwave PCB%three-dimensional microwave circuit
介绍了一种共面波导(CBCPW)与基片集成波导(SIW)的转换结构。区别于广泛采用的馈电点在共面的转换结构,该结构采用异面的馈电形式。一种变异的电流探针实现了两种传输线间的能量耦合,在 CBCPW 中的准TEM模通过它转换成SIW中的TE模。计算机辅助设计优化了该结构。实际制作并测试了一组背靠背的转换结构。测试结果显示在整个有效带宽达36%的频带内转换结构插损小于0.35 dB。在同类结构中插损较小。
介紹瞭一種共麵波導(CBCPW)與基片集成波導(SIW)的轉換結構。區彆于廣汎採用的饋電點在共麵的轉換結構,該結構採用異麵的饋電形式。一種變異的電流探針實現瞭兩種傳輸線間的能量耦閤,在 CBCPW 中的準TEM模通過它轉換成SIW中的TE模。計算機輔助設計優化瞭該結構。實際製作併測試瞭一組揹靠揹的轉換結構。測試結果顯示在整箇有效帶寬達36%的頻帶內轉換結構插損小于0.35 dB。在同類結構中插損較小。
개소료일충공면파도(CBCPW)여기편집성파도(SIW)적전환결구。구별우엄범채용적궤전점재공면적전환결구,해결구채용이면적궤전형식。일충변이적전류탐침실현료량충전수선간적능량우합,재 CBCPW 중적준TEM모통과타전환성SIW중적TE모。계산궤보조설계우화료해결구。실제제작병측시료일조배고배적전환결구。측시결과현시재정개유효대관체36%적빈대내전환결구삽손소우0.35 dB。재동류결구중삽손교소。
The transition structure of conductor backed coplanar waveguide (CBCPW)-to-substrate integrated waveguide (SIW) was introduced. The feed position of the transition structure is in the different planes distinguished from the same plane in common use. The achievement of the energy coupling between the two transmission lines was a special current probe, by which the signal of quasi-TEM mode in CBCPW transfered to TE mode in SIW. The structure was optimized by a computer-aided design to get good performances. The transition structure of back to back was fabricated and measured. The results show that the insertion loss of this transition structure is less than 0.35 dB for the effective bandwidth of 36%. The transition structure has less insertion loss among structures with the similar function.