电子元件与材料
電子元件與材料
전자원건여재료
ELECTRONIC COMPONENTS & MATERIALS
2015年
9期
59-61
,共3页
CuInS 2%薄膜%溶剂热法%光电性能%纳米粒子%太阳能电池
CuInS 2%薄膜%溶劑熱法%光電性能%納米粒子%太暘能電池
CuInS 2%박막%용제열법%광전성능%납미입자%태양능전지
CuInS2%film%solvothermal method%photoelectric property%nanoparticle%solar cell
以无机盐作为金属源（InCl3、CuCl以及CS2），采用溶剂热法制备CuInS2纳米粒子。利用XRD和TEM等检测技术对产物的结构、尺寸和形貌进行表征。分析结果表明，实验得到的样品为分散性良好的黄铜矿结构CuInS2纳米粒子。随后以易热解的铜铟硫金属有机前体作为成膜交联剂，采用旋涂法制备了CuInS 2薄膜（厚度约为1.5μm）。进一步分析样品光电性能表明，制备的CuInS 2薄膜适合作为薄膜太阳能电池的吸收层。
以無機鹽作為金屬源（InCl3、CuCl以及CS2），採用溶劑熱法製備CuInS2納米粒子。利用XRD和TEM等檢測技術對產物的結構、呎吋和形貌進行錶徵。分析結果錶明，實驗得到的樣品為分散性良好的黃銅礦結構CuInS2納米粒子。隨後以易熱解的銅銦硫金屬有機前體作為成膜交聯劑，採用鏇塗法製備瞭CuInS 2薄膜（厚度約為1.5μm）。進一步分析樣品光電性能錶明，製備的CuInS 2薄膜適閤作為薄膜太暘能電池的吸收層。
이무궤염작위금속원（InCl3、CuCl이급CS2），채용용제열법제비CuInS2납미입자。이용XRD화TEM등검측기술대산물적결구、척촌화형모진행표정。분석결과표명，실험득도적양품위분산성량호적황동광결구CuInS2납미입자。수후이역열해적동인류금속유궤전체작위성막교련제，채용선도법제비료CuInS 2박막（후도약위1.5μm）。진일보분석양품광전성능표명，제비적CuInS 2박막괄합작위박막태양능전지적흡수층。
Nano-sized CuInS2 composite oxide was synthesized by solvothermal method using InCl3, CuCl, and CS2 as metal sources. The crystal structure grain, size and morphology of the product were investigated by XRD and TEM. The results indicate that the product shows chalcopyrite structure with good dispersivity. The CuInS 2 thin film (the thickness is about 1.5μm) were prepared via the spin-coating method with Cu, In, and S metal organic precursors as the film-forming binder material. Further research on photoelectric property of product indicates that CuInS 2 thin film is suit for the application as the absorbed layer of thin-film solar cells.
