CAJ | 학술논문

柱电极垂直穿通硅片衬底的3D探测器和传统平面硅基探测器相比，具有耐辐射性、快速响应、低耗尽电压等优势，然而其器件结构、制备工艺以及系统集成上与传统结构不同，面临众多的技术挑战。近年许多机构对3D 探测器开展了一系列的研究以简化其制备工艺实现工业化，本文系统性总结了3D 硅基探测器的器件种类及特点、标准制备工艺等关键技术方法与路线，并对相关器件的性能与关键影响因素作出了总结，最后简要指出了3D硅基探测器的技术改进方向。
주전겁수직천통규편츤저적3D탐측기화전통평면규기탐측기상비，구유내복사성、쾌속향응、저모진전압등우세，연이기기건결구、제비공예이급계통집성상여전통결구불동，면림음다적기술도전。근년허다궤구대3D 탐측기개전료일계렬적연구이간화기제비공예실현공업화，본문계통성총결료3D 규기탐측기적기건충류급특점、표준제비공예등관건기술방법여로선，병대상관기건적성능여관건영향인소작출료총결，최후간요지출료3D규기탐측기적기술개진방향。
3D-detectors, with electrodes penetrating through the entire substrates, have many advantages over planar silicon sensors including radiation resistance, fast time-response and low depletion voltage. However 3D silicon detectors are different from the conventional ones in device structure, fabrication process and system integration, which results in masses of technological challenges. In recent years, many laboratories have begun research on different 3D-detector structures to simplify and industrialise the fabrication process. The structure characterization of different 3D silicon sensors and the fabrication process of the standard 3D silicon detector are analyzed systematically. Meanwhile, the crucial influencing factors of them are summarized. The technology improvement direction is briefly proposed in the end.