CAJ | 학술논문

研究了i-GaN和p-GaN厚度对背照射和正照射p-i-n结构GaN紫外探测器响应光谱的影响。模拟计算发现：对于背照射结构,适当地减小i-GaN厚度有利于提高探测器的响应,降低i-GaN层的本底载流子浓度也有利于提高探测器的响应；p-GaN的欧姆接触特性好坏对探测器的响应影响不大,适当地增加p-GaN厚度可以改善探测器性能。而正照射结构则不同,i-GaN厚度对探测器的响应度影响不大,但欧姆接触特性差将严重降低探测器的响应,适当地减小p-GaN厚度可以大幅度改善探测器的响应特性。能带结构和入射光吸收的差别导致了正照射和背照射探测器结构中i层和p层厚度的选择和设计不同。
연구료i-GaN화p-GaN후도대배조사화정조사p-i-n결구GaN자외탐측기향응광보적영향。모의계산발현：대우배조사결구,괄당지감소i-GaN후도유리우제고탐측기적향응,강저i-GaN층적본저재류자농도야유리우제고탐측기적향응；p-GaN적구모접촉특성호배대탐측기적향응영향불대,괄당지증가p-GaN후도가이개선탐측기성능。이정조사결구칙불동,i-GaN후도대탐측기적향응도영향불대,단구모접촉특성차장엄중강저탐측기적향응,괄당지감소p-GaN후도가이대폭도개선탐측기적향응특성。능대결구화입사광흡수적차별도치료정조사화배조사탐측기결구중i층화p층후도적선택화설계불동。
The effects of i-GaN and p-GaN layer thickness on the spectral response of back-illumi-nated and front-illuminated GaN p-i-n structure ultraviolet photodetectors were investigated by theory calculation. For the back-illuminated p-i-n photodetectors, the device quantum efficiency can be im-proved by both suitably decreasing the thickness of i-GaN layer and increasing the thickness of p-GaN layer, and the Ohmic contact property of p-GaN has not obvious influence on the device respon-sivity. The quantum efficiency of photodetector can be improved by reducing the background carrier concentration of i-GaN layer. The results are different for the front-illuminated p-i-n photodetectors. it is found that the device quantum efficiency can be improved by both properly increasing the thick-ness of i-GaN layer and decreasing the thickness of p-GaN layer, and the excellent Ohmic contact property of p-GaN is very important for the front-illuminated p-i-n hotodector. The opposite design method of i-GaN and p-GaN layer for the two photodetectors are mainly attributed to the different en-ergy band and photon absorption.