CAJ | 학술논문

研究了双磁垒量子结构中，磁场强度和偏压大小对电子自旋极化输运的影响。结果表明：零偏压下，电子在反平行等强磁垒结构中输运不会产生自旋极化；电子传输的阈值能量随磁场强度或偏置电压的增大而增大；在一定的磁场强度和偏压大小下,比较由半导体InAs和GaAs两类材料构成的量子结构中电子输运自旋极化度，发现它们的电子输运自旋极化度都随入射能量的增大而呈振荡衰减趋势，朗德有效因子高的InAs材料比GaAs的自旋极化度高出一个数量级。
연구료쌍자루양자결구중，자장강도화편압대소대전자자선겁화수운적영향。결과표명：령편압하，전자재반평행등강자루결구중수운불회산생자선겁화；전자전수적역치능량수자장강도혹편치전압적증대이증대；재일정적자장강도화편압대소하,비교유반도체InAs화GaAs량류재료구성적양자결구중전자수운자선겁화도，발현타문적전자수운자선겁화도도수입사능량적증대이정진탕쇠감추세，랑덕유효인자고적InAs재료비GaAs적자선겁화도고출일개수량급。
The effects of magnetic field and bias voltage on spin polarized electron transport through a dual magnetic barriers quantum structure are investigated in this paper. The results show that：（i） the spin-polarization of electron can not be produced in the anti-parallel magnetic barriers structure at zero bias voltage; （ii） the energy threshold of electronic transmission are in- crease with the increases of magnetic field or bias voltage; （iii） the comparison of the electron spin polarization degree is made between the electron transport through GaAs and through InAs quantum structure, and find that though the spin polarization degree oscillation decrease with the increase of the incidence energy, the spin polarization degree of InAs is an order of magni- tude higher than that of GaAs because of the higher Lande effective factor.