CAJ | 학술논문

提出1种描述微控制器直接功率注入（direct power injection,DPI）测量电磁传导抗扰度特性的模型.该模型在国际已有模型的基础上,在PDN模块中增加了内核网络、PLL,A/D网络等模型,能更精确的反映PDN的物理情况,同时能实现集成电路电磁兼容模型的标准化建模.最后,在不同频率的射频电磁干扰下对微控制器被测I/O端口抗扰度进行仿真分析,并与测量结果对比,结果表明在500 MHz以下,模型预测抗扰度的不确定度在允许范围内.该模型应用于PCB级别,可精确仿真PCB板的电磁兼容情况,仿真精度远高于使用IBIS模型.
제출1충묘술미공제기직접공솔주입（direct power injection,DPI）측량전자전도항우도특성적모형.해모형재국제이유모형적기출상,재PDN모괴중증가료내핵망락、PLL,A/D망락등모형,능경정학적반영PDN적물리정황,동시능실현집성전로전자겸용모형적표준화건모.최후,재불동빈솔적사빈전자간우하대미공제기피측I/O단구항우도진행방진분석,병여측량결과대비,결과표명재500 MHz이하,모형예측항우도적불학정도재윤허범위내.해모형응용우PCB급별,가정학방진PCB판적전자겸용정황,방진정도원고우사용IBIS모형.
An electrical simulation model for a direct power injection（DPI）setup which is used to measure the conducted immunity of a microcontroller is investigated.In order to describe the physical structure of the PDN more accurately,and to standardize the IC electromagnetic compatibility modelling process,a modified PDN module which adds the core,PDN network,PLL,A/D network model is proposed based on the existing model of the French workgroup.At last,by simulating the conducted immunity of the I/O port under RF interference at different frequencies,and comparing the simulation results with the measurement results,the effectiveness of the model can be approved up to 500 MHz with an acceptable uncertainty.By applying this proposed model to the immunity simulation in PCB level,the accuracy is much higher than that by using the IBIS model.