石家庄学院学报
石傢莊學院學報
석가장학원학보
Journal of Shijiazhuang University
2011年
6期
36~40
,共null页
吴海滨 东艳晖 陈永志
吳海濱 東豔暉 陳永誌
오해빈 동염휘 진영지
SnO2 薄膜 磁控溅射 局域磁矩
SnO2 薄膜 磁控濺射 跼域磁矩
SnO2 박막 자공천사 국역자구
SnO2; thin film; magnetron sputtering ; localized magnetic moments
通过射频磁控溅射的方法制备了Ta掺杂SnO2薄膜,研究了薄膜的结构和低温下电阻率随磁场的变化规律. 测量表明低温下呈现出负的磁电阻,但是,二维、三维弱局域理论均不能解释样品中出现的负的磁电阻现象. 综合考虑了三阶微绕近似的s-d交换哈密顿的半经验公式△ρ/ρ=-B1^2ln(1+BH))和双能带模型的相关公式Δρ/ρ=B3^2H/(1+BH)拟合了样品在5 T以下的磁电阻的数据,理论和实验符合得很好.结果表明Ta掺杂SnO2薄膜中的磁电阻源于局域磁矩的传导电子散射.
通過射頻磁控濺射的方法製備瞭Ta摻雜SnO2薄膜,研究瞭薄膜的結構和低溫下電阻率隨磁場的變化規律. 測量錶明低溫下呈現齣負的磁電阻,但是,二維、三維弱跼域理論均不能解釋樣品中齣現的負的磁電阻現象. 綜閤攷慮瞭三階微繞近似的s-d交換哈密頓的半經驗公式△ρ/ρ=-B1^2ln(1+BH))和雙能帶模型的相關公式Δρ/ρ=B3^2H/(1+BH)擬閤瞭樣品在5 T以下的磁電阻的數據,理論和實驗符閤得很好.結果錶明Ta摻雜SnO2薄膜中的磁電阻源于跼域磁矩的傳導電子散射.
통과사빈자공천사적방법제비료Ta참잡SnO2박막,연구료박막적결구화저온하전조솔수자장적변화규률. 측량표명저온하정현출부적자전조,단시,이유、삼유약국역이론균불능해석양품중출현적부적자전조현상. 종합고필료삼계미요근사적s-d교환합밀돈적반경험공식△ρ/ρ=-B1^2ln(1+BH))화쌍능대모형적상관공식Δρ/ρ=B3^2H/(1+BH)의합료양품재5 T이하적자전조적수거,이론화실험부합득흔호.결과표명Ta참잡SnO2박막중적자전조원우국역자구적전도전자산사.
Tantalum-doped Tin oxide thin films were prepared by RF magnetron sputtering method and their structura and low temperature magnetotransport properties were investigated. The magnetotransport properties measurement show negative magnetoresistance at all measuring temperatures. We fitted the magnetoresistance data of the samples with synthesized semiempirical expression △ρ/ρ=-B1^2ln(1+BH)) and Two band modle equation Δρ/ρ=B3^2H/(1+BH) The theory and experiment are in excellent agreement. This strongly suggests that the magnetoresistance in SnO2:Ta film originates from the scattering of conduction electrons due to localized magnetic moments.