CAJ | 학술논문

采用新型内置低感应天线电感耦合化学气相沉积系统沉积P型微晶硅薄膜，使用郎缪尔探针对等离子体参数进行诊断。研究发现离子密度（N．）可以达到10^11-10^12cm-1，而电子温度（Te）约在2eV，且随着功率的增大略有下降。P型微晶硅薄膜沉积在玻璃衬底上，研究了功率和气压对其结构和性能的影响。通过在一定SiH4：B2H6：H2流量比例下优化工艺参数，结果能在高沉积速率1nm／s的条件下制备高品质微晶硅薄膜。
채용신형내치저감응천선전감우합화학기상침적계통침적P형미정규박막，사용랑무이탐침대등리자체삼수진행진단。연구발현리자밀도（N．）가이체도10^11-10^12cm-1，이전자온도（Te）약재2eV，차수착공솔적증대략유하강。P형미정규박막침적재파리츤저상，연구료공솔화기압대기결구화성능적영향。통과재일정SiH4：B2H6：H2류량비례하우화공예삼수，결과능재고침적속솔1nm／s적조건하제비고품질미정규박막。
In this work a novel radio frequency inductively coupled plasmas chemistry vapor deposition（ICPCVD） system sustained with internal low inductance antenna （LIA） have been used to deposit p type hydrogenated microerystalline silicon （μcSi ： H） films, and the plasma generated in this system diagnosed by Langmuir probe. It found that ions density （Ni ） could arrive at 10^11 10^12 em3, and the electron temperature （Te） was below ca. 2eV, which was slightly decreased along with applied power. So it realized that high growth rate of microstalline silicon films prepared by ICPCVD systems with higher power inputting. The ptype IxeSi ： H film was prepared on glass substrate. And it was investigated that the impact of input power and working pressure on the structure and properties of microcrystalline silicon thin film. After optimization of the processing parameters in flow ratio of Sill4 ： B2H6 ： H2, a high quality p,eSf ： H films with the deposition rate over 1.0nm/s was achieved in this work.