CAJ | 학술논문

p型掺杂Zn O比较困难,使得大家寻求其它p型半导体与n型Zn O构成异质结,以扩大其在电子器件领域的应用.本文主要综述了各种n-Zn O基异质结发光二极管的结构、电特性以及发光特性.常用的p导电物质有Ga N、Si、Mg O、Ni O、聚苯烯（PANI）、Cu SCN等,除了简单的p-Ga N/n-Zn O结构外,通常在该结构中加入低导电率的中间层来调节p-Ga N/n-Zn O界面的能量.另外,Zn O纳米结构的不同形状对器件的性能影响很大,采用不同的合成条件,或者加以退火技术,可以得到性能良好的发光二极管（LEDs）.
p형참잡Zn O비교곤난,사득대가심구기타p형반도체여n형Zn O구성이질결,이확대기재전자기건영역적응용.본문주요종술료각충n-Zn O기이질결발광이겁관적결구、전특성이급발광특성.상용적p도전물질유Ga N、Si、Mg O、Ni O、취분희（PANI）、Cu SCN등,제료간단적p-Ga N/n-Zn O결구외,통상재해결구중가입저도전솔적중간층래조절p-Ga N/n-Zn O계면적능량.령외,Zn O납미결구적불동형상대기건적성능영향흔대,채용불동적합성조건,혹자가이퇴화기술,가이득도성능량호적발광이겁관（LEDs）.
P-doping of Zn O is rather difficult,so that other p-type semiconductors and n type Zn O to fabricate heterojunction,to expand its application in the field of electronic devices. This paper reviews the structures,electrical properties and luminescence properties of various types of n-Zn O based heterojunction LEDs. Commonly used p-type conductive materials include Ga N,Si,Mg O,Ni O,polyaniline（ PANI）,Cu SCN,and etc. In addition to the simple p-Ga N / n-Zn O structure,a middle layer of low conductivity usually is added to regulate energy of pGa N / n-Zn O interface. The performance of the device is affected by the morphology of Zn O nanostructures,and when different synthesis conditions or annealing technology are applied,LEDs of good performance can be manufactured.