掺杂浓度和温度对δ掺杂的AlxGa1-xAs/GaAs双量子阱系统电子态结构和子带间光学吸收系数的影响
참잡농도화온도대δ참잡적AlxGa1-xAs/GaAs쌍양자정계통전자태결구화자대간광학흡수계수적영향
Effect of Doping Concentration and Temperature on Structure of Electronic State and Intersubband Linear Optical Absorption of δ-Doped AlxGa1-xAs/GaAs Double Quantum Well
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