CAJ | 학술논문

采用直流磁控溅射技术制备了周期厚度为27．5 nm 的 W／Si 多层膜，使用实时应力测量装置对其应力特性进行了研究。为降低膜层应力，采用 W、Si 共溅射技术制备 Wx Si1－x 膜层替换 W 膜层，制备出 Wx Si1－x／Si 多层膜，与 W／Si 多层膜的应力特性进行了比较研究。结果表明，W／Si 多层膜为较大的压应力，测量值为－476．86 MPa，Wx Si1－x／Si 周期多层膜为较小的压应力，测量值为－102．84 MPa。因此采用共溅射制备 Wx Si1－x 代替 W 可以显著改善多层膜的应力特性。
채용직류자공천사기술제비료주기후도위27．5 nm 적 W／Si 다층막，사용실시응력측량장치대기응력특성진행료연구。위강저막층응력，채용 W、Si 공천사기술제비 Wx Si1－x 막층체환 W 막층，제비출 Wx Si1－x／Si 다층막，여 W／Si 다층막적응력특성진행료비교연구。결과표명，W／Si 다층막위교대적압응력，측량치위－476．86 MPa，Wx Si1－x／Si 주기다층막위교소적압응력，측량치위－102．84 MPa。인차채용공천사제비 Wx Si1－x 대체 W 가이현저개선다층막적응력특성。
W/Si multilayer film with periodic of 27.5 nm was fabricated by using DC magnetron sputtering technology.The stress property has been studied by using the real time stress measuremenmt instrument.To reduce the stress between the layers,Wx Si1-x material made by W and Si co-deposited technology was used to replace W material,and finally the Wx Si1-x/Si film was fabricated.A comparative study of stress property between Wx Si1-x/Si film and W/Si film has been conducted.The result indicates that W/Si periodic multilayer film shows relatively larger compressive stress.The value is - 476.86 MPa. Wx Si1-x/Si periodic multilayer film shows relatively smaller compressive stress.The value is - 102.84 MPa. Therefore,the replacement of W material by Wx Si1-x material fabricated by co-deposited technology can significantly improve the stress of the multilayer film.