CAJ | 학술논문

采用乙烯作为碳源，利用化学气相沉积法（C V D法），在1000℃条件下在铜箔上制备了少层石墨烯；采用不引入PM M A和PDM S 等杂质的直接转移方法将石墨烯薄膜转移到Si／SiO2基底上，对石墨烯薄膜进行了表征。实验研究表明，减小乙烯的进气量可以提高石墨烯的质量；减少反应时间可以降低无定形碳的含量；增加退火时间可以提高Cu表面结晶质量，更加有利于石墨烯的生长。通过优化各项参数，使用乙烯已经可以制备 I2D／IG ＝08．8的少层石墨烯。
채용을희작위탄원，이용화학기상침적법（C V D법），재1000℃조건하재동박상제비료소층석묵희；채용불인입PM M A화PDM S 등잡질적직접전이방법장석묵희박막전이도Si／SiO2기저상，대석묵희박막진행료표정。실험연구표명，감소을희적진기량가이제고석묵희적질량；감소반응시간가이강저무정형탄적함량；증가퇴화시간가이제고Cu표면결정질량，경가유리우석묵희적생장。통과우화각항삼수，사용을희이경가이제비 I2D／IG ＝08．8적소층석묵희。
In this article ,we chose ethylene as the carbon source ,Cu as the catalyst ,we can manufacture few‐layer graphene in 1 000 ℃ ,with method of chemical vapor deposition (CVD) ,and then utilizing a simple direct transfer method without PMMA and PDMS assisted ,we can transfer the few‐layer graphene to the Si/SiO2 sub‐strate to characterize the graphene .From the experiments done in this article we can get the following results :reducing the amount of carbon source can improve quality of graphene;decreasing the reaction duration will cut dow n the content of the amorphous carbon ;increasing the annealing time can enhance the crystalline quality of the copper surface ,and also be more conductive to the grow th of graphene .In a conclusion ,through optimizing all the parameters ,we can ,using ethylene ,manufacture few‐layer grapheme whose I2D/IG was 0 8.8 .