CAJ | 학술논문

对传统的SOI压阻式压力传感器进行了结构优化。目的是提高灵敏度，以满足在高温环境下大量程压力测量的实际需求。通过力学性能模拟，采用浅凸台结构来提高灵敏度和测量范围。分析并模拟了凸台厚度和形状对灵敏度的影响。得到了适合高温工作的掺杂浓度，压敏电阻的尺寸，金属引线的材料和布局。电阻放置在(σl-σt)最大的区域以保持灵敏度和线性度。采用U形电阻补偿在浅凸台制作过程中的工艺偏差对灵敏度的影响。有限元分析(FEA)表明，优化后的芯片结构可以测量10 MPa范围内的压力，灵敏度高达86.6 mV/(V·MPa)，非线性误差在0.1％以下。和其他文献报道的大量程压力传感器相比，浅凸台芯片结构灵敏度和过载能力优异。
대전통적SOI압조식압력전감기진행료결구우화。목적시제고령민도，이만족재고온배경하대량정압력측량적실제수구。통과역학성능모의，채용천철태결구래제고령민도화측량범위。분석병모의료철태후도화형상대령민도적영향。득도료괄합고온공작적참잡농도，압민전조적척촌，금속인선적재료화포국。전조방치재(σl-σt)최대적구역이보지령민도화선성도。채용U형전조보상재천철태제작과정중적공예편차대령민도적영향。유한원분석(FEA)표명，우화후적심편결구가이측량10 MPa범위내적압력，령민도고체86.6 mV/(V·MPa)，비선성오차재0.1％이하。화기타문헌보도적대량정압력전감기상비，천철태심편결구령민도화과재능력우이。
This paper focuses on structural design for optimizing sensitivity of traditional piezoresistive SOI pressure sensor to en?hance measurement range in high-temperature environments. By modeling mechanical properties,a shallow-boss configuration is adopt?ed for increasing sensitivity and measurement range. Key influence factors of sensitivity including boss thickness and shape are ana?lyzed and simulated. Doping concentration,size of single piezoresistor,arrangement of metal wires and their material are obtained when taking into account device high-temperature performance. Piezoresistor location is arranged on the basis of taking full advantage of max?imum(σl-σt)regions to maintain sensitivity and linearity. According to stress distribution of the diaphragm,U-shaped piezoresistors are finally adopted by considering sensitivity loss due to fabrication deviation of shallow bossed structure. Finite element analysis (FEA)results show that the optimum design enables the sensor chip to operate in wider pressure condition(within 10 MPa)with a high sensitivity of 86.6 mV/(V · MPa)and excellent nonlinearity is less than 0.1%. Compared with other current wide-range sensors,the strength of shallow central bossed structure lies in sensitivity and overload capacity.