CAJ | 학술논문

以 Hummers法获得的氧化石墨为原料制备氧化石墨烯，在不同温度下还原获得不同还原程度的还原氧化石墨烯，采用AFM、XRD、XPS和SEM 对样品的结构、官能团及表面形貌进行表征，并采用涂覆法制备氧化石墨烯和还原氧化石墨烯气敏器件。结果表明，所得氧化石墨烯片厚度为10．8～17．2 n m ，为单层或双层氧化石墨烯。经100～250℃还原后，样品对应的底面间距由88．7nm减小至36．8nm ；随还原程度增加，O／C原子比由04．3降至03．2；含氧官能团逐渐减少，其中C‐OH含量明显降低；元件灵敏度降低。氧化石墨烯及其低还原程度产物的气敏元件对C H4和H2气体表现出较高的响应和灵敏度，S‐G O S对C H4的灵敏度可达81％左右，对H2灵敏度可达772．％。
이 Hummers법획득적양화석묵위원료제비양화석묵희，재불동온도하환원획득불동환원정도적환원양화석묵희，채용AFM、XRD、XPS화SEM 대양품적결구、관능단급표면형모진행표정，병채용도복법제비양화석묵희화환원양화석묵희기민기건。결과표명，소득양화석묵희편후도위10．8～17．2 n m ，위단층혹쌍층양화석묵희。경100～250℃환원후，양품대응적저면간거유88．7nm감소지36．8nm ；수환원정도증가，O／C원자비유04．3강지03．2；함양관능단축점감소，기중C‐OH함량명현강저；원건령민도강저。양화석묵희급기저환원정도산물적기민원건대C H4화H2기체표현출교고적향응화령민도，S‐G O S대C H4적령민도가체81％좌우，대H2령민도가체772．％。
Graphene oxide (GOS) was prepared by graphite oxide (GO) which was prepared by the Hummers method ,then roasted the GOS under different temperatures to get different reduction degrees of graphene oxide (RGOS) .Structure ,functional groups ,and surface topography of the samples were carried out by AFM ,XRD , XPS ,and SEM .The GOS and RGOS gas sensors were then fabricated by coating method .Results show that the Graphene oxide thickness is 1 0.8‐1 7.2 nm ,for single or double GOS .When graphene oxide was reduced from 100 to 250 ℃ ,the basal spacing of the samples were decreasing from 8 8.7 to 3 6.8 nm ;With the increasing of the reduction degrees ,the O/C atomic ratio was decreasing from 0 4.3 to 0 3.2 ,showed that the oxygen‐contai‐ning functional groups were gradually reduced and the C‐OH functional group was decreased obviously ,the gas sensitivity was also decreased .Graphene oxide and its lower reduced products show a good sensitivity to CH4 and H2 gas .The GOS sensor had a best sensitivity to CH4 and H2 gas which can reach 81% and 77 2.% ,respec‐tively .