功能材料
功能材料
공능재료
Journal of Functional Materials
2015年
16期
16037-16043,16051
,共8页
CVD%预处理铜基板%特殊空间结构:单晶石墨烯
CVD%預處理銅基闆%特殊空間結構:單晶石墨烯
CVD%예처리동기판%특수공간결구:단정석묵희
CVD%representative Cu substrate%special spatial structure%single crystal graphene
石墨烯是一种以S P2键结合的二维碳的同素异形体,其独一无二的优异性能,使得其在过去几十年里受到了石墨烯研究工作者的极大兴趣。但石墨烯不同于自然界的石墨,并且受限于小尺寸和低产率。化学气相沉积法(CVD )的出现解决了这些问题,并逐渐发展为一种规模生产大面积、大尺寸、多应用石墨烯的重要方法。但化学气相沉积法生长石墨烯是多晶石墨烯并且由于晶界会产生降解性能。因此,石墨烯生长研究的下一个关键问题是如何让大晶粒单晶石墨烯生长。本文主要叙述了4种代表性预处理铜基板来生长毫米级单层石墨烯的方法:电化学抛光后高温退火、盒状铜箔基板、融化再结晶成新的铜基板、让铜基板富氧。以及现在发展的石墨烯晶粒的特殊空间结构,这些特殊晶粒包括雪花、六瓣鲜花、金字塔和六角形的石墨烯洋葱圈形状。综述了利用不同预处理铜基板的工艺得到毫米级单晶石墨烯的方法。尽管CVD生长单晶石墨烯已经有了空前的进步,但仍然有潜在的挑战,例如,晶元尺寸单晶石墨烯的生长和器件的制作,以及对石墨烯生长机制和生长动力学的进一步了解。
石墨烯是一種以S P2鍵結閤的二維碳的同素異形體,其獨一無二的優異性能,使得其在過去幾十年裏受到瞭石墨烯研究工作者的極大興趣。但石墨烯不同于自然界的石墨,併且受限于小呎吋和低產率。化學氣相沉積法(CVD )的齣現解決瞭這些問題,併逐漸髮展為一種規模生產大麵積、大呎吋、多應用石墨烯的重要方法。但化學氣相沉積法生長石墨烯是多晶石墨烯併且由于晶界會產生降解性能。因此,石墨烯生長研究的下一箇關鍵問題是如何讓大晶粒單晶石墨烯生長。本文主要敘述瞭4種代錶性預處理銅基闆來生長毫米級單層石墨烯的方法:電化學拋光後高溫退火、盒狀銅箔基闆、融化再結晶成新的銅基闆、讓銅基闆富氧。以及現在髮展的石墨烯晶粒的特殊空間結構,這些特殊晶粒包括雪花、六瓣鮮花、金字塔和六角形的石墨烯洋蔥圈形狀。綜述瞭利用不同預處理銅基闆的工藝得到毫米級單晶石墨烯的方法。儘管CVD生長單晶石墨烯已經有瞭空前的進步,但仍然有潛在的挑戰,例如,晶元呎吋單晶石墨烯的生長和器件的製作,以及對石墨烯生長機製和生長動力學的進一步瞭解。
석묵희시일충이S P2건결합적이유탄적동소이형체,기독일무이적우이성능,사득기재과거궤십년리수도료석묵희연구공작자적겁대흥취。단석묵희불동우자연계적석묵,병차수한우소척촌화저산솔。화학기상침적법(CVD )적출현해결료저사문제,병축점발전위일충규모생산대면적、대척촌、다응용석묵희적중요방법。단화학기상침적법생장석묵희시다정석묵희병차유우정계회산생강해성능。인차,석묵희생장연구적하일개관건문제시여하양대정립단정석묵희생장。본문주요서술료4충대표성예처리동기판래생장호미급단층석묵희적방법:전화학포광후고온퇴화、합상동박기판、융화재결정성신적동기판、양동기판부양。이급현재발전적석묵희정립적특수공간결구,저사특수정립포괄설화、륙판선화、금자탑화륙각형적석묵희양총권형상。종술료이용불동예처리동기판적공예득도호미급단정석묵희적방법。진관CVD생장단정석묵희이경유료공전적진보,단잉연유잠재적도전,례여,정원척촌단정석묵희적생장화기건적제작,이급대석묵희생장궤제화생장동역학적진일보료해。
As a two‐dimensional (2D) sp2‐bonded carbon allotrope ,graphene has attracted enormous interest o‐ver the past decade due to its unique properties .In the initial research ,graphene was isolated from natural graphite ,and limited to small sizes and low yields .Recently developed chemical vapor deposition (CVD) tech‐niques have emerged as an important method for the scalable production of large‐size and high‐quality graphene for various applications .However ,CVD‐derived graphene is polycrystalline and demonstrates degraded proper‐ties induced by grain boundaries .Thus ,the next critical step of graphene growth relies on the synthesis of large graphene single crystals .We review four representative pathways of pretreating Cu substrates to make millime‐ter‐sized monolayer graphene grains :electrochemical polishing and high‐pressure annealing of Cu substrate , adding of additional Cu enclosures ,melting and resolidfying Cu substrates ,and oxygen‐rich Cu substrates . Then we further discuss recently developed methods of making graphene grains with special spatial structures , including snowflakes ,six‐lobed flowers ,pyramids and hexagonal graphene onion rings .This review also sum‐marizes the synthesizing millimeter‐sized monolayer graphene grains using different pretreatments .Although great advancements have been achieved in CVD synthesis of graphene single crystals ,potential challenges still exist ,such as the growth of wafer‐sized graphene single crystals to further facilitate the fabrication of graphene‐based devices ,as well as a deeper understanding of graphene growth mechanisms and growth dynamics in order to make graphene grains with precisely controlled thicknesses and spatial structures .