CAJ | 학술논문

采用磁控溅射预制In薄膜和硫化热处理工艺制备了性能优良的β‐In2 S3薄膜。应用XRD、拉曼光谱仪及U V‐Vis测试仪对薄膜的品质进行了分析，并测试了薄膜的光学与电学性能。结果表明，溅射功率和硫化热处理温度是影响薄膜品质的主要因素，比较合适的溅射功率为100～140 W ，硫化热处理温度为450℃，过高的热处理温度容易在薄膜中形成缺陷，在薄膜生长过程中容易产生In5 S4杂相，相比之下，溅射气体压强对薄膜品质的影响较小，溅射气体压强可选择在04．～06．Pa。光学与电学性能测试结果指出，得到的β‐In2 S3薄膜具有良好的光谱透过率，属n型半导体，可用于太阳能电池缓冲层。
채용자공천사예제In박막화류화열처리공예제비료성능우량적β‐In2 S3박막。응용XRD、랍만광보의급U V‐Vis측시의대박막적품질진행료분석，병측시료박막적광학여전학성능。결과표명，천사공솔화류화열처리온도시영향박막품질적주요인소，비교합괄적천사공솔위100～140 W ，류화열처리온도위450℃，과고적열처리온도용역재박막중형성결함，재박막생장과정중용역산생In5 S4잡상，상비지하，천사기체압강대박막품질적영향교소，천사기체압강가선택재04．～06．Pa。광학여전학성능측시결과지출，득도적β‐In2 S3박막구유량호적광보투과솔，속n형반도체，가용우태양능전지완충층。
Theβ‐In2S3 thin films with excellent properties were prepared by magnetron sputtering In films and sulfurizing heat treatment process .Qualities of thin films were analyzed by used XRD ,Raman spectroscopy and UV‐Vis spectroscopy ;The results demonstrate that sputtering power have great influence on the crystallization properties of thin film ,the optimization sputtering power was 100‐140 W .In addition ,heat treatment tempera‐ture has also great influence on the quality of the thin film ,more appropriate heat treatment temperature was 450 ℃ .The higher heat treatment temperature is easy to cause defects and produce In5 S4 impurity phase in the film .In contrast ,the sputtering gas pressure effect on the film quality is small ,the sputtering gas pressure can be selected in the 0 4.‐0 6. Pa .Optical and electrical performance test results show that obtaining theβ‐In2 S3 thin films have better quality and high spectral transmittance ,which belongs to n type semiconductor ,can be used buffer layer for solar cells .