CAJ | 학술논문

将不同厚度杜邦聚酰亚胺（PI ）薄膜进行压制炭化、石墨化处理得到 PI石墨膜。采用扫描电镜、X射线衍射、、拉曼光谱等测试手段分析了PI薄在高温热处理过程中的结构演变。研究结果表明，50μm厚PI膜经3000℃高温石墨化后能形成三维有序堆积的石墨层状结构和较为完整的石墨晶体，其石墨片层间距为03．36nm，层片堆积高度达到65．94nm，石墨化度高达93％，室温面向电阻率为04．8μW?m ，实测面向热导率达到了994 W／（m?K ）。随着热处理温度的提高，PI 膜微晶由无定型向有序类石墨结构转变，其结晶度和层片取向程度提高，石墨晶体逐渐完善。PI膜厚度越大，其类石墨晶体生长发育越困难，层片择优取向程度越低。
장불동후도두방취선아알（PI ）박막진행압제탄화、석묵화처리득도 PI석묵막。채용소묘전경、X사선연사、、랍만광보등측시수단분석료PI박재고온열처리과정중적결구연변。연구결과표명，50μm후PI막경3000℃고온석묵화후능형성삼유유서퇴적적석묵층상결구화교위완정적석묵정체，기석묵편층간거위03．36nm，층편퇴적고도체도65．94nm，석묵화도고체93％，실온면향전조솔위04．8μW?m ，실측면향열도솔체도료994 W／（m?K ）。수착열처리온도적제고，PI 막미정유무정형향유서류석묵결구전변，기결정도화층편취향정도제고，석묵정체축점완선。PI막후도월대，기류석묵정체생장발육월곤난，층편택우취향정도월저。
Graphite films were prepared from DuPon polyimide films with different thicknesses by carbonization and graphitization treatments at a certain press .The micro‐structural evolution of PI films during the process of high‐temperature treatments was characterized by polarized light microscope ,scanning electron microscope ,X‐ray diffraction and Raman spectrum .The results show that the PI graphite films (with a thickness of 50μm for raw films) possess a three‐dimensional structure of graphite layers with preferred orientation and prefect graph‐ite crystals after graphitization at 3 000 ℃ .The corresponding interlayer spacing and stacking height of (002) crystal plane of the PI graphite film are 0 3.36 and 65 9.4 nm ,respectively .The degree of graphitization of the PI graphite film is as high as 93% ,and the electrical resistivity and thermal conductivity of the PI graphite films at room temperature in the main plane direction are measured to be 0 4.8 μW?m and 994 W/(m?K) ,respective‐ly .The higher heat‐treated temperature ,the more easily transformation from the turbostratic carbon to ordered graphite ,resulting in the better grow th and crystallization of graphite microcrystals ,and the more orientation of graphite layers .However ,the microcrystals in the thick PI graphite films grow and crystallize difficultly ,and their preferred orientation of carbon layers is very low .