电子科技
電子科技
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Electronic Science and Technology
2015年
9期
172-174
,共3页
有铝激光器%无铝激光器%特征温度%阈值电流法
有鋁激光器%無鋁激光器%特徵溫度%閾值電流法
유려격광기%무려격광기%특정온도%역치전류법
Al-containing LD%Al-free LD%characteristic temperature%threshold current method
为了测量两种有源区材料半导体激光器的温度灵敏度，文中对InGaAsP／GaAs无铝和AlGaInAs／AlGaAs／GaAs有铝的808 nm大功率半导体激光器，采用阈值电流法衡量两种有源区材料激光器的特征温度。在各种温度下实验性地测量激光器的P－I曲线，并采用线性拟合法得到阈值温度线性关系，实验结果表明有铝激光器温度性能明显优于无铝激光器。
為瞭測量兩種有源區材料半導體激光器的溫度靈敏度，文中對InGaAsP／GaAs無鋁和AlGaInAs／AlGaAs／GaAs有鋁的808 nm大功率半導體激光器，採用閾值電流法衡量兩種有源區材料激光器的特徵溫度。在各種溫度下實驗性地測量激光器的P－I麯線，併採用線性擬閤法得到閾值溫度線性關繫，實驗結果錶明有鋁激光器溫度性能明顯優于無鋁激光器。
위료측량량충유원구재료반도체격광기적온도령민도，문중대InGaAsP／GaAs무려화AlGaInAs／AlGaAs／GaAs유려적808 nm대공솔반도체격광기，채용역치전류법형량량충유원구재료격광기적특정온도。재각충온도하실험성지측량격광기적P－I곡선，병채용선성의합법득도역치온도선성관계，실험결과표명유려격광기온도성능명현우우무려격광기。
At present, AlGaInAs and InGaAsP have been mainly used in 808 nm high-power laser diode active layer, and the semiconductor laser is very sensitive to temperature.In order to measure the temperature sensitivity of two active layer material LDs, the threshold current method are used for 808 nm high power Al-free InGaAsP/GaAs lasers and Al-containing AlGaInAs/AlGaAs/GaAs lasers to measure the characteristic temperature.We test the P-I curves at various temperatures and obtain the linear relationship between the threshold current and temperature by lin-ear fitting.Experimental results show that the temperature properties of aluminum laser are better than those of the Al-free laser.
