CAJ | 학술논문

针对一种短波红外阈透射式光阴极，简要介绍其光子吸收层和电子发射层分离式异质结结构后，结合异质结两侧对红外光子显著吸收效应参数和对电子高效输运特性参数进行建模，详细研究了场助电压对p-p型异质结能带结构和对短波红外阈透射式光电阴极的影响。研究结果显示：Schottky势垒偏压至少要达到8 V才能较好消除p-InGaAs/p-InP异质结的势垒影响。此时，为达到较小的漏电流， In0.53Ga0.47As光吸收层厚度2?m，InP发射层厚度1?m，掺杂浓度均为1×1016 cm－3。
침대일충단파홍외역투사식광음겁，간요개소기광자흡수층화전자발사층분리식이질결결구후，결합이질결량측대홍외광자현저흡수효응삼수화대전자고효수운특성삼수진행건모，상세연구료장조전압대p-p형이질결능대결구화대단파홍외역투사식광전음겁적영향。연구결과현시：Schottky세루편압지소요체도8 V재능교호소제p-InGaAs/p-InP이질결적세루영향。차시，위체도교소적루전류， In0.53Ga0.47As광흡수층후도2?m，InP발사층후도1?m，참잡농도균위1×1016 cm－3。
One type of shortwave infrared threshold transmission field-assisted photocathode was reviewed, because of its heterojunction structure, the photon absorption layer and electron-emitting layer were separated from each other. On the basis of significant infrared photon absorption effect and high efficient carrier transmission effect, the influence of field-assisted voltage impact upon the energy band structure and the short-wave infrared threshold photocathode were modeled and simulated. This study demonstrates that the schottky barrier bias voltage at least reaches to 8 V to eliminate the effect of p-InGaAs/p-InP heterojunction barrier. And under this condition, in order to get smaller leakage current, the thickness of In0.53Ga0.47As absorption layer is 2?m, the thickness of InP electron-emitting layer is 1?m, and both dopant level are 1×1016cm-3.