高等学校化学学报
高等學校化學學報
고등학교화학학보
Chemical Journal of Chinese Universities
2015年
9期
1765-1770
,共6页
多孔钛基体%掺硼金刚石薄膜电极%阿司匹林%电催化降解
多孔鈦基體%摻硼金剛石薄膜電極%阿司匹林%電催化降解
다공태기체%참붕금강석박막전겁%아사필림%전최화강해
Porous titanium substrate%Boron-doped diamond film electrode%Aspirin%Electrochemical degradation
利用扫描电子显微镜( SEM)和X射线衍射仪( XRD)对多孔Ti/BDD电极及传统平板Ti/BDD( BDD =钛基掺硼金刚石)电极进行了研究,通过循环伏安法考察了电极的背景电流和电化学窗口。以阿司匹林为模型污染物,研究了BDD电极结构对阿司匹林电催化降解的影响。结果表明,多孔Ti/BDD电极的总带电量,内、外部带电量,孔隙率和比表面积均高于平板Ti/BDD电极;多孔Ti/BDD在对COD和阿司匹林的去除率和能量消耗等方面均优于平板Ti/BDD电极。
利用掃描電子顯微鏡( SEM)和X射線衍射儀( XRD)對多孔Ti/BDD電極及傳統平闆Ti/BDD( BDD =鈦基摻硼金剛石)電極進行瞭研究,通過循環伏安法攷察瞭電極的揹景電流和電化學窗口。以阿司匹林為模型汙染物,研究瞭BDD電極結構對阿司匹林電催化降解的影響。結果錶明,多孔Ti/BDD電極的總帶電量,內、外部帶電量,孔隙率和比錶麵積均高于平闆Ti/BDD電極;多孔Ti/BDD在對COD和阿司匹林的去除率和能量消耗等方麵均優于平闆Ti/BDD電極。
이용소묘전자현미경( SEM)화X사선연사의( XRD)대다공Ti/BDD전겁급전통평판Ti/BDD( BDD =태기참붕금강석)전겁진행료연구,통과순배복안법고찰료전겁적배경전류화전화학창구。이아사필림위모형오염물,연구료BDD전겁결구대아사필림전최화강해적영향。결과표명,다공Ti/BDD전겁적총대전량,내、외부대전량,공극솔화비표면적균고우평판Ti/BDD전겁;다공Ti/BDD재대COD화아사필림적거제솔화능량소모등방면균우우평판Ti/BDD전겁。
The surface morphology and crystal structure of three-dimensional 3 D-porous titanium/boron-doped diamond( porous Ti/BDD ) and planar Ti/BDD electrodes were studied by scanning electron microscopy (SEM) and X-ray diffraction(XRD). The cyclic voltammetry measurements of porous Ti/BDD and planar Ti/BDD electrodes were also performed. Porous Ti/BDD and planar Ti/BDD electrodes were used as anodes in the degradation of Aspirin, respectively. The results indicate that porous Ti/BDD has larger total, outer, and inner charges, porosity, and actual surface area due to the porous structure. Compared to planar Ti/PDD, porous Ti/BDD electrode is better on removal rate of chemical oxygen demand( COD) and Aspirin and energy consumption.