CAJ | 학술논문

化学气相沉积法制备六方氮化硼原子层薄膜一直是研究的热点和难点,薄膜结晶质量会直接影响到石墨烯晶体管中石墨烯电子迁移率的高低. 为提高六方氮化硼原子层薄膜的结晶质量,采用低压化学气相沉积法,以硼烷氨作为前驱物,铜箔作为基底,研究了氢气流量和前驱物温度对六方氮化硼原子层薄膜生长的影响. 研究结果发现,较低的氢气流量有助于薄膜的连续生长,而前驱物温度对薄膜生长影响较小.
화학기상침적법제비륙방담화붕원자층박막일직시연구적열점화난점,박막결정질량회직접영향도석묵희정체관중석묵희전자천이솔적고저. 위제고륙방담화붕원자층박막적결정질량,채용저압화학기상침적법,이붕완안작위전구물,동박작위기저,연구료경기류량화전구물온도대륙방담화붕원자층박막생장적영향. 연구결과발현,교저적경기류량유조우박막적련속생장,이전구물온도대박막생장영향교소.
Hexagonal boron nitride ( h-BN ) atomic layer thin film has always been the hot spot of the research for chemical vapor deposition system.The crystal quality of h-BN film will directly affect the electron mobility of graphene for graphene transistors.In order to improve the crystal quality of h-BN atomic film,using low pressure chemical vapor deposition method, with borane ammonia as precursors and copper foil as substrate,studied the hydrogen flow rate and temperature of the precursors of hexagonal boron nitride atomic layer thin film growth.The results show that low hydrogen flow rate benefits the continuous thin film growth, while the temperature of the precursors has less influence on film growth.