CAJ | 학술논문

利用MEMS(微机电系统)工艺中的扩散,刻蚀,氧化,金属溅射等工艺制备出SOI高温压力敏感芯片,并通过静电键合工艺在SOI芯片背面和玻璃间形成真空参考腔,最后通过引线键合工艺完成敏感芯片与外部设备的电气连接.对封装的敏感芯片进行高温下的加压测试,高温压力测试结果表明,在21℃(常温)至300℃的温度范围内,传感器敏感芯片可在压力量程内正常工作,传感器敏感芯片的线性度从0.9 985下降为0.9 865,控制在较小的范围内.高温压力下的性能测试结果表明,该压力传感器可用于300℃恶劣环境下的压力测量,其高温下的稳定性能为压阻式高温压力芯片的研制提供了参考.
이용MEMS(미궤전계통)공예중적확산,각식,양화,금속천사등공예제비출SOI고온압력민감심편,병통과정전건합공예재SOI심편배면화파리간형성진공삼고강,최후통과인선건합공예완성민감심편여외부설비적전기련접.대봉장적민감심편진행고온하적가압측시,고온압력측시결과표명,재21℃(상온)지300℃적온도범위내,전감기민감심편가재압역량정내정상공작,전감기민감심편적선성도종0.9 985하강위0.9 865,공제재교소적범위내.고온압력하적성능측시결과표명,해압력전감기가용우300℃악렬배경하적압력측량,기고온하적은정성능위압조식고온압력심편적연제제공료삼고.
By using the process of diffusion,etching,oxidation,sputtering in MEMS(micro electro mechanical sys-tem)process,the SOI high temperature pressure sensor chip is prepared,and the vacuum chamber is formed be-tween the back of sensor chip with the glass through the electrostatic bonding process,finally the sensor chip and the peripheral equipment is connected through the wire bonding process. Test the packaged sensor chip under high temperature with high pressure,the test results shows that in the temperature range 21℃(at room temperature)to 300℃,the sensor chip can work normally in the pressure scale,the linearity of the sensor chip is decreased from 0.9 985 to 0.9 865,controlled in a small range. The performance test results under high temperature pressure shows that the pressure sensor can be used for pressure measurement in 300℃harsh environment,the stable performance under high temperature has provided reference for the development of piezoresistive pressure chip.