CAJ | 학술논문

通过MOCVD和CVD生长技术,利用高Al组分AlGaN和单层石墨烯材料进行纵向集成,成功制备了日盲紫外-近红外双色探测器。在工作温度为室温、调制频率为209 Hz以及工作电压分别为10 V和5 V的工作条件下,所制备的双色探测器在紫外波段263 nm处的响应度为5.9 mA/W,在近红外波段1.15μm处的响应度为0.67 mA/W,并且探测器的响应度均随着工作电压的增加而增大。
통과MOCVD화CVD생장기술,이용고Al조분AlGaN화단층석묵희재료진행종향집성,성공제비료일맹자외-근홍외쌍색탐측기。재공작온도위실온、조제빈솔위209 Hz이급공작전압분별위10 V화5 V적공작조건하,소제비적쌍색탐측기재자외파단263 nm처적향응도위5.9 mA/W,재근홍외파단1.15μm처적향응도위0.67 mA/W,병차탐측기적향응도균수착공작전압적증가이증대。
Employing MOCVD and CVD growth technique, the solar blind ultraviolet-near infrared dual-color detectors were successfully fabricated based on AlGaN with high Al component and single-layer graphene materials by vertical integration. The typical response of the dual color detectors in the ultraviolet band at 263 nm is 5. 9 mA/W, and that in the near infrared band at 1. 15μm is 0. 67 mA/W, under the operating condition of room temperature, the modulation frequency of 209 Hz, and the operating voltage of 10 V and 5 V, respectively. Besides, the responses of the two types of detectors will increase with the increase of operating voltage.