发光学报
髮光學報
발광학보
Chinese Journal of Luminescence
2015年
10期
1145-1149
,共5页
WOLEDs%空穴阻挡层%光谱稳定性
WOLEDs%空穴阻擋層%光譜穩定性
WOLEDs%공혈조당층%광보은정성
WOLEDs%hole-blocking layer%spectrum stability
制备了多层结构合成的白光有机电致发光器件( WOLEDs),通过在发光层中加入一层空穴阻挡层TP-Bi来提高器件的光谱稳定性。当TPBi厚度为2.5 nm时,在电压由8 V升高到12 V的过程中,CIE色坐标的变化量为(0.031,0.006)。器件的电流效率为24.7 cd/A,外部量子效率最大为8.2%。相对于没有加入中间层的器件,8 V电压下的色坐标由(0.435,0.472)变为(0.333,0.439)。实验结果表明,在发光层中添加中间层可以改变器件发光的色坐标并提升光谱的稳定性。
製備瞭多層結構閤成的白光有機電緻髮光器件( WOLEDs),通過在髮光層中加入一層空穴阻擋層TP-Bi來提高器件的光譜穩定性。噹TPBi厚度為2.5 nm時,在電壓由8 V升高到12 V的過程中,CIE色坐標的變化量為(0.031,0.006)。器件的電流效率為24.7 cd/A,外部量子效率最大為8.2%。相對于沒有加入中間層的器件,8 V電壓下的色坐標由(0.435,0.472)變為(0.333,0.439)。實驗結果錶明,在髮光層中添加中間層可以改變器件髮光的色坐標併提升光譜的穩定性。
제비료다층결구합성적백광유궤전치발광기건( WOLEDs),통과재발광층중가입일층공혈조당층TP-Bi래제고기건적광보은정성。당TPBi후도위2.5 nm시,재전압유8 V승고도12 V적과정중,CIE색좌표적변화량위(0.031,0.006)。기건적전류효솔위24.7 cd/A,외부양자효솔최대위8.2%。상대우몰유가입중간층적기건,8 V전압하적색좌표유(0.435,0.472)변위(0.333,0.439)。실험결과표명,재발광층중첨가중간층가이개변기건발광적색좌표병제승광보적은정성。
The multilayer structure of phosphorescent organic white light-emitting devices( WOLEDs) were fabricated, and the spectral stability was enhanced by adding hole-blocking layer ( TPBi) in the light emitting layer. When the thickness of TPBi is 2. 5 nm, the change of CIE coordinate is (0. 031, 0. 006) during the voltage changing from 8 to 12 V. In addition, the current efficiency is 24. 7 cd/A, and the maximum external quantum efficiency is 8. 2%. Compared with the device without hole-bloc-king layer, the CIE coordinate changes from (0. 435, 0. 472) to (0. 333, 0. 439) while the voltage is 8 V. The experiment results show that the CIE coordinate can be changed and the spectral stability can be enhanced by adding an interlayer in the light emitting layer.