CAJ | 학술논문

从保持力失效时间的角度出发，对相变存储器实施了保持力加速寿命实验。实验过程中发现，在比较高的温度下，随着测试时间的增长，存储器单元的RESET阻值会逐渐变小。这个现象符合Arrhenius模型。而且，温度越高，失效时间越短。不同初始 RESET 阻值条件下的阻值分布曲线也验证了通过增加非晶区域的有效体积可以改善保持力可靠性。不同存储器单元的失效时间分布也验证了一个假设：若在非晶区域中本来就存在晶粒，则晶粒生长重组会缩短失效时间；若是晶化过程发生在非晶区域和结晶区域的边界处，失效时间会明显增长。
종보지력실효시간적각도출발，대상변존저기실시료보지력가속수명실험。실험과정중발현，재비교고적온도하，수착측시시간적증장，존저기단원적RESET조치회축점변소。저개현상부합Arrhenius모형。이차，온도월고，실효시간월단。불동초시 RESET 조치조건하적조치분포곡선야험증료통과증가비정구역적유효체적가이개선보지력가고성。불동존저기단원적실효시간분포야험증료일개가설：약재비정구역중본래취존재정립，칙정립생장중조회축단실효시간；약시정화과정발생재비정구역화결정구역적변계처，실효시간회명현증장。
An acceleration test was carried out to have a deeper understanding on retention characterization of failure time in phase change memory. As the time flows, the resistance would decrease under a high temperature, which can also be induced from the Arrhenius model. The higher the temperature, the shorter the failure time. The distributions for different values of initial RESET resistance suggested that improving the active volume of chalcogenide amorphous region will be beneficial for the retention reliability. The failure time distribution of different cells also represent a hypothesis that the grain growth with nucleation existing in the amorphous region induces a shorter time, while the grain growth at the boundary between amorphous/crystalline regions induces a longer one.