电子元件与材料
電子元件與材料
전자원건여재료
Electronic Components & Materials
2015年
10期
6-9
,共4页
(Bi1.5Zn0.5)(Zn0.5Nb1.5)O7%Li2O-B2O3-SiO2玻璃%助剂%掺杂%介电性能%低温烧结
(Bi1.5Zn0.5)(Zn0.5Nb1.5)O7%Li2O-B2O3-SiO2玻璃%助劑%摻雜%介電性能%低溫燒結
(Bi1.5Zn0.5)(Zn0.5Nb1.5)O7%Li2O-B2O3-SiO2파리%조제%참잡%개전성능%저온소결
(Bi1.5Zn0.5)(Zn0.5Nb1.5)O7%Li2O-B2O3-SiO2 glass%assistants%doping%dielectric properties%low temperature sintering
采用传统的固相反应法制备了Li2O-B2O3-SiO2(LBS)玻璃掺杂的(Bi1.5Zn0.5)(Zn0.5Nb1.5)O7（BZN）陶瓷，研究了LBS作为烧结助剂对BNZ陶瓷的烧结特性、晶相组成、微观结构以及介电性能的影响。结果表明，添加少量LBS玻璃后的陶瓷试样中没有出现第二相，主晶相仍为立方焦绿石结构。烧结助剂能有效降低BZN陶瓷的烧结温度，当LBS质量分数为0.6%时，陶瓷试样的烧结温度降到900℃，制备的试样具有良好的介电性能：相对介电常数为159，介质损耗为8×10–4(1 MHz)。
採用傳統的固相反應法製備瞭Li2O-B2O3-SiO2(LBS)玻璃摻雜的(Bi1.5Zn0.5)(Zn0.5Nb1.5)O7（BZN）陶瓷，研究瞭LBS作為燒結助劑對BNZ陶瓷的燒結特性、晶相組成、微觀結構以及介電性能的影響。結果錶明，添加少量LBS玻璃後的陶瓷試樣中沒有齣現第二相，主晶相仍為立方焦綠石結構。燒結助劑能有效降低BZN陶瓷的燒結溫度，噹LBS質量分數為0.6%時，陶瓷試樣的燒結溫度降到900℃，製備的試樣具有良好的介電性能：相對介電常數為159，介質損耗為8×10–4(1 MHz)。
채용전통적고상반응법제비료Li2O-B2O3-SiO2(LBS)파리참잡적(Bi1.5Zn0.5)(Zn0.5Nb1.5)O7（BZN）도자，연구료LBS작위소결조제대BNZ도자적소결특성、정상조성、미관결구이급개전성능적영향。결과표명，첨가소량LBS파리후적도자시양중몰유출현제이상，주정상잉위립방초록석결구。소결조제능유효강저BZN도자적소결온도，당LBS질량분수위0.6%시，도자시양적소결온도강도900℃，제비적시양구유량호적개전성능：상대개전상수위159，개질손모위8×10–4(1 MHz)。
Li2O-B2O3-SiO2(LBS) glass doped (Bi1.5Zn0.5)(Zn0.5Nb1.5)O7(BZN) ceramics were prepared by the conventional solid state reaction method. The influences of LBS additives on the sintering behavior, phase composition, microstructure and dielectric properties of BZN ceramics were investigated. The results show that the secondary phase isn’t observed for the BZN ceramics with LBS glass, and the major phase of ceramics is still cubic pyrochlore phase. The LBS additives can effectively decrease the sintering temperature of BZN ceramics. BZN ceramics doped with mass fraction of 0.6% of LBS sintered at 900℃ obtain good dielectric properties ofεr=159, tanδ = 8×10–4(1 MHz).
