CAJ | 학술논문

文章利用溶胶凝胶法在ITO／玻璃衬底上制备不同浓度Co掺杂的BiFe1－x Cox O3（ x＝0．00、0．05、0．1、0．15）薄膜样品。研究了Co的掺杂对BiFeO 3薄膜的结构、形貌、漏电流及介电性能的影响。 X－射线衍射（ XRD）结果显示，未掺的和Co掺杂浓度为5％的BiFeO 3样品为菱方钙钛矿结构，属于R3c空间群。而当Co掺杂浓度为10％和15％时，样品变为四方结构。原子力显微镜（ AFM）结果表明，随着Co掺杂浓度的升高，铁酸铋薄膜变得越致密，且尺寸越小。漏电流和介电性能分析结果表明，随着Co元素掺杂浓度的增加，产物的介电损耗有所增加，但其漏电流性能有所下降。当Co的掺杂浓度分别为10％和15％时，薄膜的漏电流很小。
문장이용용효응효법재ITO／파리츤저상제비불동농도Co참잡적BiFe1－x Cox O3（ x＝0．00、0．05、0．1、0．15）박막양품。연구료Co적참잡대BiFeO 3박막적결구、형모、루전류급개전성능적영향。 X－사선연사（ XRD）결과현시，미참적화Co참잡농도위5％적BiFeO 3양품위릉방개태광결구，속우R3c공간군。이당Co참잡농도위10％화15％시，양품변위사방결구。원자력현미경（ AFM）결과표명，수착Co참잡농도적승고，철산필박막변득월치밀，차척촌월소。루전류화개전성능분석결과표명，수착Co원소참잡농도적증가，산물적개전손모유소증가，단기루전류성능유소하강。당Co적참잡농도분별위10％화15％시，박막적루전류흔소。
Co-doped BiFe1-xCoxO3(x=0.00、0.05、0.10、0.15) thin films were fabricated on indium tin oxide/glass substrates by sol-gel process.And the structure, morphology and electric properties were studied.X-ray dif-fraction analysis indicated that the pure BiFeO3 and Co-doped 5%BiFeO3 thin films presented single rhombohedral perovskite structure with a space group of R3c.The Co-doped 10%and 15%BiFeO3 thin films presented tetragonal structure with different space symmetry.The atom force microscope ( AFM) indicated thin film become dense and the grains size decreases with Co-doping.Leakage current and dielectric performance analysis results show that with the increase of Co-doping concentration, the product of the dielectric loss increased, but its leakage current per-formance decreased, compared with a pure BiFeO3 film.When the concentration of Co doping was 10%and 15%respectively, the film of the leakage current is very small.