电子学报
電子學報
전자학보
Acta Electronica Sinica
2015年
9期
1864-1869
,共6页
姚常飞%陈振华%周明%罗运生%许从海%郁建
姚常飛%陳振華%週明%囉運生%許從海%鬱建
요상비%진진화%주명%라운생%허종해%욱건
W波段%砷化镓肖特基二极管%功率合成%倍频%效率
W波段%砷化鎵肖特基二極管%功率閤成%倍頻%效率
W파단%신화가초특기이겁관%공솔합성%배빈%효솔
W-band%GaAs Schottky diode%power combing%multiplying%efficiency
本文采用混合集成技术,实现了75~115GHz 的 W波段六倍频功率合成信号源.其 Ku 波段输入信号经有源二倍频、功分及放大后,输出两路各约24dBm 的 Ka 波段信号,以驱动75~115GHz 三倍频器,变阻二极管基于南京电子器件研究所(NEDI)的 GaAs 工艺线设计实现,三倍频信号经功率合成后输出.考虑到倍频二极管各种寄生参数的影响,本文采用去嵌入阻抗计算方法,提取二极管的输入阻抗及三次谐波输出阻抗,综合分析匹配电路,优化倍频器效率.在75~115GHz 测得六倍频源输出功率大于8.0dBm、输出功率平坦;在112GHz 测得最大输出功率为10.2dBm,合成倍频效率大于1.3%,其性能达到了国外同类产品水平,可将微波信号源扩展至75~115GHz,解决了 W波段 TR 组件本振源及发射源的产生问题.
本文採用混閤集成技術,實現瞭75~115GHz 的 W波段六倍頻功率閤成信號源.其 Ku 波段輸入信號經有源二倍頻、功分及放大後,輸齣兩路各約24dBm 的 Ka 波段信號,以驅動75~115GHz 三倍頻器,變阻二極管基于南京電子器件研究所(NEDI)的 GaAs 工藝線設計實現,三倍頻信號經功率閤成後輸齣.攷慮到倍頻二極管各種寄生參數的影響,本文採用去嵌入阻抗計算方法,提取二極管的輸入阻抗及三次諧波輸齣阻抗,綜閤分析匹配電路,優化倍頻器效率.在75~115GHz 測得六倍頻源輸齣功率大于8.0dBm、輸齣功率平坦;在112GHz 測得最大輸齣功率為10.2dBm,閤成倍頻效率大于1.3%,其性能達到瞭國外同類產品水平,可將微波信號源擴展至75~115GHz,解決瞭 W波段 TR 組件本振源及髮射源的產生問題.
본문채용혼합집성기술,실현료75~115GHz 적 W파단륙배빈공솔합성신호원.기 Ku 파단수입신호경유원이배빈、공분급방대후,수출량로각약24dBm 적 Ka 파단신호,이구동75~115GHz 삼배빈기,변조이겁관기우남경전자기건연구소(NEDI)적 GaAs 공예선설계실현,삼배빈신호경공솔합성후수출.고필도배빈이겁관각충기생삼수적영향,본문채용거감입조항계산방법,제취이겁관적수입조항급삼차해파수출조항,종합분석필배전로,우화배빈기효솔.재75~115GHz 측득륙배빈원수출공솔대우8.0dBm、수출공솔평탄;재112GHz 측득최대수출공솔위10.2dBm,합성배빈효솔대우1.3%,기성능체도료국외동류산품수평,가장미파신호원확전지75~115GHz,해결료 W파단 TR 조건본진원급발사원적산생문제.
A 75 ~115GHz power combined frequency sextupler is developed with hybrid integrated technology.The frequen-cy of the input Ku-band signal is doubled by an active doubler,and then its output power is amplified to 24dBm.The power is ap-plied to pump 75 ~115GHz tripler in which the varistor multiplying diode is realized by GaAs foundry of Nanjing electronic devices institute (NEDI),and the tripler output power is combined.Considering parasitic parameters of the diodes,diode input and output optimum impedance is calculated with embedding analysis for matching circuit optimization.Measured results indicate the output power of the sextupler is higher than 8.0dBm,and power response is flat in 75 ~115GHz.The highest tested power is 10.2dBm at 110GHz,and combined multiplying efficiency is higher than 1 .3%.The sextupler performance achieves the level of similar foreign products,which can expand the existing microwave signals to 75 ~115GHz and be applied for W-band TR modules.